BU706D Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU706D

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 7.5

Encapsulados: ISOTOP3

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BU706D datasheet

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 bu706d.pdf pdf_icon

BU706D

isc Silicon NPN Power Transistor BU706D DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications A

 0.1. Size:214K  inchange semiconductor
 bu706df.pdf pdf_icon

BU706D

isc Silicon NPN Power Transistor BU706DF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications

 9.1. Size:242K  inchange semiconductor
 bu706f.pdf pdf_icon

BU706D

isc Silicon NPN Power Transistor BU706F DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25

 9.2. Size:215K  inchange semiconductor
 bu706.pdf pdf_icon

BU706D

MOSTRAR MÁS

Otros transistores... BU608D, BU626, BU626A, BU705, BU705D, BU705DF, BU705F, BU706, D965, BU706DF, BU706F, BU724, BU724A, BU724AS, BU726, BU800, BU800A