BU706F Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU706F

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 29 W

Tensión colector-base (Vcb): 1500 V

Tensión colector-emisor (Vce): 700 V

Corriente del colector DC máxima (Ic): 5 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 7.5

Encapsulados: TO220F

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BU706F datasheet

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 bu706f.pdf pdf_icon

BU706F

isc Silicon NPN Power Transistor BU706F DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications ABSOLUTE MAXIMUM RATINGS(T =25

 9.1. Size:217K  inchange semiconductor
 bu706d.pdf pdf_icon

BU706F

isc Silicon NPN Power Transistor BU706D DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications A

 9.2. Size:214K  inchange semiconductor
 bu706df.pdf pdf_icon

BU706F

isc Silicon NPN Power Transistor BU706DF DESCRIPTION Collector-Emitter Sustaining Voltage- V = 700V(Min) CEO(SUS) High Switching Speed Built-in Integrated Diode Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in horizontal deflection circuits of color TV receivers and line operated switch-mode applications

 9.3. Size:215K  inchange semiconductor
 bu706.pdf pdf_icon

BU706F

MOSTRAR MÁS

Otros transistores... BU626A, BU705, BU705D, BU705DF, BU705F, BU706, BU706D, BU706DF, TIP2955, BU724, BU724A, BU724AS, BU726, BU800, BU800A, BU800S, BU801