BU806 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

BU806BU807MEDIUM VOLTAGE NPN FAST SWITCHINGDARLINGTON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES NPN DARLINGTONS LOW BASE-DRIVE REQUIREMENTS INTEGRATED ANTIPARALLELCOLLECTOR-EMITTER DIODE APPLICATION HORIZONTAL DEFLECTION FOR32MONOCHROME TVs 1DESCRIPTION TO-220The devices are silicon Epitaxial Planar NPNpower transistors in Darlington configu

BU806/807High Voltage & Fast Switching Darlington Transistor Using In Horizontal Output Stages of 110 Crt Video Displays BUILT-IN SPEED-UP Diode Between Base and EmitterTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base V

NPN EPITAXIALBU806/807 SILICON DARLINGTON TRANSISTORFAST SWITCHING DARLINGTONTO-220TRANSISTORHIGH VOLTAGE DARLINGTON TRANSISTORUSING IN HORIZONTAL OUTPUT STAGESOF 110 CTR VIDEO DISPLAYSBUILT-IN SPEED-UP Diode Between Base and EmitterABSOLUTE MAXIMUM RATINGSCharacteristic Symbol Rating Unit Collector-Base Voltage : BU806 VCBO 400 V1.Base 2.Collector 3.Emitter : BU807

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU806 DESCRIPTION High Voltage: VCEV= 400V(Min) Low Saturation Voltage- : VCE(sat)= 1.5V(Max)@ IC= 5A APPLICATIONS Designed for use in horizontal deflection circuits in TVs and CRTs. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCBO Collector-Base Vol

Order this documentMOTOROLAby BU806/DSEMICONDUCTOR TECHNICAL DATABU806NPN Darlington PowerTransistor8.0 AMPEREThis Darlington transistor is a high voltage, high speed device for use in horizontalDARLINGTONdeflection circuits in TVs and CRTs. NPN POWER High Voltage: VCEV = 330 or 400 VTRANSISTORS Fast Switching Speed:60 WATTStc = 1.0 s (max) 200 VO

BU806/807High Voltage & Fast Switching Darlington Transistor Using In Horizontal Output Stages of 110 Crt Video Displays BUILT-IN SPEED-UP Diode Between Base and EmitterTO-22011.Base 2.Collector 3.EmitterNPN Epitaxial Silicon Darlington Transistor Absolute Maximum Ratings TC=25C unless otherwise notedSymbol Parameter Value Units VCBO Collector-Base V

isc Silicon NPN Darlington Power Transistor BU806FIDESCRIPTIONHigh voltageHigh switching speedLow saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis Darlington transistor is a high voltage ,high speeddevice for use in horizontal deflection circuits in TVsand CRTsABSOLU

isc Silicon NPN Darlington Power Transistor BU806FDESCRIPTIONHigh voltageHigh switching speedLow saturation voltage100% avalanche testedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSThis Darlington transistor is a high voltage ,high speeddevice for use in horizontal deflection circuits in TVsand CRTsABSOLUT