BU920 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU920

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 120 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 100

Encapsulados: TO3

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BU920 datasheet

 ..1. Size:207K  inchange semiconductor
 bu920.pdf pdf_icon

BU920

isc Silicon NPN Darlington Power Transistor BU920 DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage V = 0 400 V CES BE V Colle

 0.1. Size:217K  inchange semiconductor
 bu920p.pdf pdf_icon

BU920

isc Silicon NPN Darlington Power Transistor BU920P DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage V = 0 400 V CES BE V Coll

 0.2. Size:217K  inchange semiconductor
 bu920pfi.pdf pdf_icon

BU920

isc Silicon NPN Darlington Power Transistor BU920PFI DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage V = 0 400 V CES BE V Co

 0.3. Size:211K  inchange semiconductor
 bu920t.pdf pdf_icon

BU920

isc Silicon NPN Darlington Power Transistor BU920T DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for automotive ignition applications and inverter circuits for motor control. ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter Voltage V = 0 400 V CES BE V Coll

MOSTRAR MÁS

Otros transistores... BU902F, BU903, BU903F, BU908, BU908AF, BU910, BU911, BU912, C945, BU920P, BU920PFI, BU920T, BU921, BU921P, BU921PFI, BU921T, BU921TFI