BU921ZTFI . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BU921ZTFI
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 450 V
   Tensión colector-emisor (Vce): 400 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 10 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 50
Paquete / Cubierta: TOP3

Búsqueda de reemplazo de transistor bipolar BU921ZTFI

BU921ZTFI Datasheet (PDF)

9.1. Size:216K inchange semiconductor
bu921pfi.pdf

isc Silicon NPN Darlington Power Transistor BU921PFIDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for automotive ignition applications and invertercircuits for motor control.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage V = 0 450 VCES BEV Co

9.2. Size:217K inchange semiconductor
bu921p.pdf

isc Silicon NPN Darlington Power Transistor BU921PDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for automotive ignition applications and invertercircuits for motor control.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage V = 0 450 VCES BEV Coll

9.3. Size:217K inchange semiconductor
bu921t.pdf

isc Silicon NPN Darlington Power Transistor BU921TDESCRIPTIONHigh VoltageDarlingtonMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for automotive ignition applications and invertercircuits for motor control.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage V = 0 450 V

9.4. Size:206K inchange semiconductor
bu921.pdf

isc Silicon NPN Power Transistor BU921DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 400V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for automotive ignition applications and invertercircuits for motor control.ABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Emi

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050