BU931PFI Todos los transistores

 ..1. Size:97K  st
 bu931 bu931p bu931pfi.pdf

BU931/BU931P BU931PFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES TO-3 APPLICATIONS 1 HIGH RUGGEDNESS ELECTRONIC 2 IGNITIONS 3 3 2 2 1 1 TO-218 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM for TO-3 Emitter pin 2 Base pin1 Collector tab ABSOLUTE MAXIMUM RATINGS Symbol Pa

 8.1. Size:216K  inchange semiconductor
 bu931p.pdf

isc Silicon NPN Power Transistor BU931P DESCRIPTION High Voltage DARLINGTON Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 4

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 bu931t.pdf

BU931T Automotive-grade high voltage ignition coil driver NPN power Darlington transistor Datasheet - production data Features AEC-Q101 qualified Very rugged Bipolar technology TAB High operating junction temperature Applications 3 High ruggedness electronic ignitions 2 1 Description TO-220 This is a high voltage power Darlington transistor developed

 9.2. Size:77K  st
 bu931-bub931t.pdf

BU931T BUB931T HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) POWER PACKAGE IN TUBE (NO SUFFIX) OR IN TAPE & REEL (SUFFIX T4 ) APPLICATIONS 3 3 2 HIGH RUGGEDNESS ELECTRONIC 1 1 IGNITIONS TO-220 D2PAK TO-263 INTERNAL SCHEMATIC DIAG

 9.3. Size:213K  inchange semiconductor
 bu931t.pdf

isc Silicon NPN Power Transistor BU931T DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V E

 9.4. Size:217K  inchange semiconductor
 bu931rpfi.pdf

isc Silicon NPN Power Transistor BU931RPFI DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V CBO V Collector-Emitter Voltage 400 V CEO

 9.5. Size:132K  inchange semiconductor
 bu931r bu932r.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU931R BU932R DESCRIPTION With TO-3 package DARLINGTON APPLICATIONS Automotive ignition applications Inverters circuits for motor controls PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter Fig.1 simplified outline (TO-3) and symbol 3 Collector Absolute maximum ratings(Ta=25 ) SYMBO

 9.6. Size:223K  inchange semiconductor
 bu931zpfi.pdf

isc Silicon NPN Darlington Power Transistor BU931ZPFI DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min.) CEO(SUS) High Reliability Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(T

 9.7. Size:212K  inchange semiconductor
 bu931z.pdf

isc Silicon NPN Darlington Power Transistor BU931Z DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min.) CEO(SUS) High Reliability Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(T =2

 9.8. Size:208K  inchange semiconductor
 bu931.pdf

isc Silicon NPN Power Transistor BU931 DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 500 V CBO V Collector-Emitter Voltage 400 V CEO V Em

 9.9. Size:218K  inchange semiconductor
 bu931zp.pdf

isc Silicon NPN Darlington Power Transistor BU931ZP DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min.) CEO(SUS) High Reliability Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS(T =

 9.10. Size:208K  inchange semiconductor
 bu931r.pdf

isc Silicon NPN Power Transistor BU931R DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V CBO V Collector-Emitter Voltage 400 V CEO V E

 9.11. Size:218K  inchange semiconductor
 bu931rp.pdf

isc Silicon NPN Power Transistor BU931RP DESCRIPTION High Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS High ruggedness electronic ignitions High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 450 V CBO V Collector-Emitter Voltage 400 V CEO V