BU931PFI
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU931PFI
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 60
W
Tensión colector-base (Vcb): 500
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 80
Paquete / Cubierta:
ISOWATT218
Búsqueda de reemplazo de transistor bipolar BU931PFI
BU931PFI
Datasheet (PDF)
..1. Size:97K st
bu931 bu931p bu931pfi.pdf 
BU931/BU931PBU931PFIHIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGESTO-3APPLICATIONS1 HIGH RUGGEDNESS ELECTRONIC2IGNITIONS33221 1TO-218 ISOWATT218INTERNAL SCHEMATIC DIAGRAMfor TO-3Emitter: pin 2Base: pin1Collector: tabABSOLUTE MAXIMUM RATINGSSymbol Pa
8.1. Size:216K inchange semiconductor
bu931p.pdf
isc Silicon NPN Power Transistor BU931PDESCRIPTIONHigh VoltageDARLINGTONMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 4
9.1. Size:654K st
bu931t.pdf
BU931T Automotive-grade high voltage ignition coil driver NPN power Darlington transistor Datasheet - production data Features AEC-Q101 qualified Very rugged Bipolar technology TAB High operating junction temperature Applications 3 High ruggedness electronic ignitions 21Description TO-220This is a high voltage power Darlington transistor developed
9.2. Size:77K st
bu931-bub931t.pdf
BU931TBUB931T HIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263)POWER PACKAGE IN TUBE (NO SUFFIX)OR IN TAPE & REEL (SUFFIX T4)APPLICATIONS332 HIGH RUGGEDNESS ELECTRONIC11IGNITIONSTO-220 D2PAKTO-263INTERNAL SCHEMATIC DIAG
9.3. Size:213K inchange semiconductor
bu931t.pdf
isc Silicon NPN Power Transistor BU931TDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV E
9.4. Size:217K inchange semiconductor
bu931rpfi.pdf
isc Silicon NPN Power Transistor BU931RPFIDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEO
9.5. Size:132K inchange semiconductor
bu931r bu932r.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU931R BU932R DESCRIPTION With TO-3 package DARLINGTON APPLICATIONS Automotive ignition applications Inverters circuits for motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBO
9.6. Size:223K inchange semiconductor
bu931zpfi.pdf
isc Silicon NPN Darlington Power Transistor BU931ZPFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T
9.7. Size:212K inchange semiconductor
bu931z.pdf
isc Silicon NPN Darlington Power Transistor BU931ZDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T =2
9.8. Size:208K inchange semiconductor
bu931.pdf
isc Silicon NPN Power Transistor BU931DESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Em
9.9. Size:218K inchange semiconductor
bu931zp.pdf
isc Silicon NPN Darlington Power Transistor BU931ZPDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T =
9.10. Size:208K inchange semiconductor
bu931r.pdf
isc Silicon NPN Power Transistor BU931RDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEOV E
9.11. Size:218K inchange semiconductor
bu931rp.pdf
isc Silicon NPN Power Transistor BU931RPDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEOV
Otros transistores... 2N3200
, 2N3201
, 2N3202
, 2N3203
, 2N3204
, 2N3205
, 2N3206
, 2N3207
, B772
, 2N3209
, 2N3209AQF
, 2N3209CSM
, 2N3209DCSM
, 2N3209L
, 2N321
, 2N3210
, 2N3211
.
