BU931R
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU931R
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 175
W
Tensión colector-base (Vcb): 500
V
Tensión colector-emisor (Vce): 400
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 170
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO3
Búsqueda de reemplazo de BU931R
-
Selección ⓘ de transistores por parámetros
BU931R
Datasheet (PDF)
..1. Size:132K inchange semiconductor
bu931r bu932r.pdf 

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU931R BU932R DESCRIPTION With TO-3 package DARLINGTON APPLICATIONS Automotive ignition applications Inverters circuits for motor controls PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outline (TO-3) and symbol 3 CollectorAbsolute maximum ratings(Ta=25) SYMBO
..2. Size:208K inchange semiconductor
bu931r.pdf 

isc Silicon NPN Power Transistor BU931RDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEOV E
0.1. Size:217K inchange semiconductor
bu931rpfi.pdf 

isc Silicon NPN Power Transistor BU931RPFIDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEO
0.2. Size:218K inchange semiconductor
bu931rp.pdf 

isc Silicon NPN Power Transistor BU931RPDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 450 VCBOV Collector-Emitter Voltage 400 VCEOV
9.1. Size:654K st
bu931t.pdf 

BU931T Automotive-grade high voltage ignition coil driver NPN power Darlington transistor Datasheet - production data Features AEC-Q101 qualified Very rugged Bipolar technology TAB High operating junction temperature Applications 3 High ruggedness electronic ignitions 21Description TO-220This is a high voltage power Darlington transistor developed
9.2. Size:77K st
bu931-bub931t.pdf 

BU931TBUB931T HIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263)POWER PACKAGE IN TUBE (NO SUFFIX)OR IN TAPE & REEL (SUFFIX T4)APPLICATIONS332 HIGH RUGGEDNESS ELECTRONIC11IGNITIONSTO-220 D2PAKTO-263INTERNAL SCHEMATIC DIAG
9.3. Size:97K st
bu931 bu931p bu931pfi.pdf 

BU931/BU931PBU931PFIHIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGESTO-3APPLICATIONS1 HIGH RUGGEDNESS ELECTRONIC2IGNITIONS33221 1TO-218 ISOWATT218INTERNAL SCHEMATIC DIAGRAMfor TO-3Emitter: pin 2Base: pin1Collector: tabABSOLUTE MAXIMUM RATINGSSymbol Pa
9.4. Size:213K inchange semiconductor
bu931t.pdf 

isc Silicon NPN Power Transistor BU931TDESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV E
9.5. Size:216K inchange semiconductor
bu931p.pdf 

isc Silicon NPN Power Transistor BU931PDESCRIPTIONHigh VoltageDARLINGTONMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 4
9.6. Size:223K inchange semiconductor
bu931zpfi.pdf 

isc Silicon NPN Darlington Power Transistor BU931ZPFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T
9.7. Size:212K inchange semiconductor
bu931z.pdf 

isc Silicon NPN Darlington Power Transistor BU931ZDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T =2
9.8. Size:208K inchange semiconductor
bu931.pdf 

isc Silicon NPN Power Transistor BU931DESCRIPTIONHigh VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage 400 VCEOV Em
9.9. Size:218K inchange semiconductor
bu931zp.pdf 

isc Silicon NPN Darlington Power Transistor BU931ZPDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T =
Otros transistores... BU926
, BU930
, BU930P
, BU930Z
, BU930ZP
, BU931
, BU931P
, BU931PFI
, A733
, BU931RP
, BU931RPFI
, BU931SM
, BU931T
, BU931TFI
, BU931Z
, BU931ZP
, BU931ZPFI
.
History: 40323
| 2SD1825
| BU931T
| KC307A
| MM1163