BU941 Todos los transistores

 

BU941 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BU941

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 180 W

Tensión colector-base (Vcb): 500 V

Tensión colector-emisor (Vce): 400 V

Tensión emisor-base (Veb): 5 V

Corriente del colector DC máxima (Ic): 15 A

Temperatura operativa máxima (Tj): 175 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 300

Empaquetado / Estuche: TO3

Búsqueda de reemplazo de transistor bipolar BU941

 

BU941 Datasheet (PDF)

1.1. bu941zt bu941ztfp bub941zt.pdf Size:89K _update

BU941
BU941

BU941ZT/BU941ZTFP BUB941ZT  HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIX ”T4”) 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC I

1.2. bu941a-b.pdf Size:268K _update

BU941
BU941

RoHS BU941 Series RoHS SEMICONDUCTOR Nell High Power Products NPN Power Darlington High Voltage lgnition Coil Driver, 15A, 400V FEATURES C NPN Darlington C Integrated antiparallel Collector-Emitter Diode Very rugged bipolar technology High operating junction temperature B CE B C E APPLICATIONS High ruggedness electronic ignitions TO-3P(B) TO-220AB (BU941A) (BU941

 1.3. bu941ztfp-zt bub941zt.pdf Size:413K _update

BU941
BU941

BU941ZT/BU941ZTFP BUB941ZT ® HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTION TEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263) 3 3 POWER PACKAGE IN TUBE (NO SUFFIX) 2 2 OR IN TAPE & REEL (SUFFIX "T4") 1 1 TO-220 TO-220FP APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITI

1.4. bu941.pdf Size:87K _st

BU941
BU941

BU941/BU941P BU941PFI ? HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON NPN DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE VERY RUGGED BIPOLAR TECHNOLOGY TO-3 HIGH OPERATING JUNCTION TEMPERATURE 1 WIDE RANGE OF PACKAGES 2 APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITIONS 3 3 2 2 1 1 TO-218 ISOWATT218 INTERNAL SCHEMATIC DIAGRAM for TO-3 Emitter: p

 1.5. bu941p.pdf Size:101K _st

BU941
BU941

BU941/BU941P BU941PFI HIGH VOLTAGE IGNITION COIL DRIVER NPN POWER DARLINGTON SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE TO-3 VERY RUGGED BIPOLAR TECHNOLOGY HIGH OPERATING JUNCTION 1 TEMPERATURE 2 WIDE RANGE OF PACKAGES APPLICATIONS HIGH RUGGEDNESS ELECTRONIC IGNITIONS 3 3 2 2 1 1 TO-218 ISOWATT218 INTERNAL SCHEMATIC

1.6. bu941.pdf Size:65K _jmnic

BU941
BU941

Product Specification www.jmnic.com Silicon NPN Power Transistor BU941 DESCRIPTION ·High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5 V IC Collector Cu

1.7. bu941p.pdf Size:41K _jmnic

BU941
BU941

Product Specification www.jmnic.com Silicon NPN Power Transistors BU941P DESCRIPTION · ·With TO-3PN package ·DARLINGTON ·High breakdown voltage APPLICATIONS ·High ruggedness electronic ignitions. ·High voltage ignition coil driver PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolut

1.8. bu941zpfi.pdf Size:119K _inchange_semiconductor

BU941
BU941

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU941ZPFI DESCRIPTION Ў¤ With TO-3PML package Ў¤ DARLINGTON Ў¤ High breakdown voltage APPLICATIONS Ў¤ High ruggedness electronic ignitions PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PML) and symbol DESCRIPTION Ў¤ Absolute maximum ratings (Ta

1.9. bu941zp.pdf Size:100K _inchange_semiconductor

BU941
BU941

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Darlington Power Transistor BU941ZP DESCRIPTION ·Built In Clamping Zener ·High Operating Junction Temperature APPLICATIONS ·Designed for use in automotive environment as electronic ignition power actuators. ABSOLUTE MAXIMUM RATINGS(Ta=25?) SYMBOL PARAMETER VALUE UNIT VCEO Collector-Emitter Voltage 350 V VEBO E

1.10. bu941.pdf Size:146K _inchange_semiconductor

BU941
BU941

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU941 DESCRIPTION ·High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5

1.11. bu941t.pdf Size:131K _inchange_semiconductor

BU941
BU941

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BU941T DESCRIPTION ·High Voltage ·DARLINGTON APPLICATIONS ·High ruggedness electronic ignitions ·High voltage ignition coil driver ABSOLUTE MAXIMUM RATINGS (Ta=25?) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 5

1.12. bu941p.pdf Size:122K _inchange_semiconductor

BU941
BU941

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BU941P DESCRIPTION Ў¤ With TO-3PN package Ў¤ DARLINGTON Ў¤ High breakdown voltage APPLICATIONS Ў¤ High ruggedness electronic ignitions. Ў¤ High voltage ignition coil driver PINNING PIN 1 2 3 Base Collector;connected to mounting base Emitter Fig.1 simplified outline (TO-3PN) and symbol DESCRIPTION

1.13. bu941zle3.pdf Size:247K _cystek

BU941
BU941

Spec. No. : C660E3 Issued Date : 2014.01.09 CYStech Electronics Corp. Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 350V BU941ZLE3 IC 15A VCESAT(MAX) 1.6V Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivalent

1.14. bu941zfp.pdf Size:220K _cystek

BU941
BU941

Spec. No. : C660FP Issued Date : 2008.05.20 CYStech Electronics Corp. Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BU941ZFP Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free package Applications •High ruggedness electronic ignitions Equivalent Circuit Outline BU941ZFP TO-220FP C B E B

1.15. bu941ze3.pdf Size:221K _cystek

BU941
BU941

Spec. No. : C660E3 Issued Date : 2010.02.03 CYStech Electronics Corp. Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BVCEO 350V BU941ZE3 IC 15A RCESAT(MAX) 0.18Ω Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivale

1.16. bu941zp3.pdf Size:243K _cystek

BU941
BU941

Spec. No. : C660P3 Issued Date : 2008.07.22 CYStech Electronics Corp. Revised Date :2011.01.04 Page No. : 1/5 NPN Epitaxial Planar Transistor BVCEO 350V IC 15A BU941ZP3 VCESAT(MAX) 2V @12A Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions

1.17. bu941zf3.pdf Size:242K _cystek

BU941
BU941

Spec. No. : C660F3 Issued Date : 2010.10.01 CYStech Electronics Corp. Revised Date : 2014.02.13 Page No. : 1/6 NPN Epitaxial Planar Transistor BU941ZF3 Features •High BVCEO •Low VCE(SAT) •High current capability •Built-in clamping zener •Pb-free lead plating package Applications •High ruggedness electronic ignitions Equivalent Circuit Outline TO-263

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , 9012 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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