BU941Z
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU941Z
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 180
W
Tensión colector-base (Vcb): 350
V
Tensión colector-emisor (Vce): 300
V
Tensión emisor-base (Veb): 5
V
Corriente del colector DC máxima (Ic): 15
A
Temperatura operativa máxima (Tj): 175
°C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta:
TO3
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BU941Z
Datasheet (PDF)
0.1. Size:286K 1
bu941zl bu941zg.pdf 

UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION 1TO-3PCOIL DRIVER FEATURES 1TO-220* NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS 1* High ruggedness electric ignitions TO-263 INTERNAL SCHEMATIC DIAGRAM (2) CB(1)(3) E ORDERING INFORMATION Ordering Number
0.2. Size:89K st
bu941zt bu941ztfp bub941zt.pdf 

BU941ZT/BU941ZTFPBUB941ZT HIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263)3 3POWER PACKAGE IN TUBE (NO SUFFIX)2 2OR IN TAPE & REEL (SUFFIX T4)1 1TO-220 TO-220FPAPPLICATIONS HIGH RUGGEDNESS ELECTRONICI
0.3. Size:413K st
bu941ztfp-zt bub941zt.pdf 

BU941ZT/BU941ZTFPBUB941ZTHIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263)3 3POWER PACKAGE IN TUBE (NO SUFFIX)2 2OR IN TAPE & REEL (SUFFIX "T4")1 1TO-220 TO-220FPAPPLICATIONS HIGH RUGGEDNESS ELECTRONICIGNITI
0.4. Size:247K cystek
bu941zle3.pdf 

Spec. No. : C660E3 Issued Date : 2014.01.09 CYStech Electronics Corp.Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 350VBU941ZLE3 IC 15AVCESAT(MAX) 1.6VFeatures High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivalent
0.5. Size:221K cystek
bu941ze3.pdf 

Spec. No. : C660E3 Issued Date : 2010.02.03 CYStech Electronics Corp.Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BVCEO 350VBU941ZE3 IC 15ARCESAT(MAX) 0.18 Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivale
0.6. Size:242K cystek
bu941zf3.pdf 

Spec. No. : C660F3 Issued Date : 2010.10.01 CYStech Electronics Corp.Revised Date : 2014.02.13 Page No. : 1/6 NPN Epitaxial Planar Transistor BU941ZF3 Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivalent Circuit Outline TO-263
0.7. Size:220K cystek
bu941zfp.pdf 

Spec. No. : C660FP Issued Date : 2008.05.20 CYStech Electronics Corp.Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BU941ZFP Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free package Applications High ruggedness electronic ignitions Equivalent Circuit Outline BU941ZFP TO-220FP C B E B
0.8. Size:243K cystek
bu941zp3.pdf 

Spec. No. : C660P3 Issued Date : 2008.07.22 CYStech Electronics Corp.Revised Date :2011.01.04 Page No. : 1/5 NPN Epitaxial Planar Transistor BVCEO 350VIC 15ABU941ZP3 VCESAT(MAX) 2V @12AFeatures High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions
0.9. Size:235K inchange semiconductor
bu941zl.pdf 

isc Silicon NPN Darlington Power Transistor BU941ZLDESCRIPTIONBuilt In Clamping ZenerHigh Operating Junction TemperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electric ignitionsABSOLUTE MAXIMUM RATINGS(TB B=25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 350 VCEOVB Emitter-Base
0.10. Size:226K inchange semiconductor
bu941zpfi.pdf 

isc Silicon NPN Darlington Power Transistor BU941ZPFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T
0.11. Size:211K inchange semiconductor
bu941zt.pdf 

isc Silicon NPN Power Transistor BU941ZTDESCRIPTIONHigh VoltageDARLINGTONMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage
0.12. Size:218K inchange semiconductor
bu941zp.pdf 

isc Silicon NPN Darlington Power Transistor BU941ZPDESCRIPTIONBuilt In Clamping ZenerHigh Operating Junction TemperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in automotive environment aselectronic ignition power actuators.ABSOLUTE MAXIMUM RATINGS(TB B=25)aSYMBOL PARAMETER VALUE UNITV Colle
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