BU941ZPFI . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BU941ZPFI
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 65 W
Tensión colector-base (Vcb): 350 V
Tensión colector-emisor (Vce): 300 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 175 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 300
Paquete / Cubierta: ISOWATT218
Búsqueda de reemplazo de transistor bipolar BU941ZPFI
BU941ZPFI Datasheet (PDF)
bu941zpfi.pdf
isc Silicon NPN Darlington Power Transistor BU941ZPFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 350V(Min.)CEO(SUS)High ReliabilityLow Collector Saturation VoltageMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS(T
bu941zp3.pdf
Spec. No. : C660P3 Issued Date : 2008.07.22 CYStech Electronics Corp.Revised Date :2011.01.04 Page No. : 1/5 NPN Epitaxial Planar Transistor BVCEO 350VIC 15ABU941ZP3 VCESAT(MAX) 2V @12AFeatures High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions
bu941zp.pdf
isc Silicon NPN Darlington Power Transistor BU941ZPDESCRIPTIONBuilt In Clamping ZenerHigh Operating Junction TemperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in automotive environment aselectronic ignition power actuators.ABSOLUTE MAXIMUM RATINGS(TB B=25)aSYMBOL PARAMETER VALUE UNITV Colle
bu941zl bu941zg.pdf
UNISONIC TECHNOLOGIES CO., LTD BU941Z NPN SILICON TRANSISTOR NPN POWER DARLINGTON HIGH VOLTAGE IGNITION 1TO-3PCOIL DRIVER FEATURES 1TO-220* NPN Darlington * Integrated antiparallel collector-emitter diode APPLICATIONS 1* High ruggedness electric ignitions TO-263 INTERNAL SCHEMATIC DIAGRAM (2) CB(1)(3) E ORDERING INFORMATION Ordering Number
bu941zt bu941ztfp bub941zt.pdf
BU941ZT/BU941ZTFPBUB941ZT HIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263)3 3POWER PACKAGE IN TUBE (NO SUFFIX)2 2OR IN TAPE & REEL (SUFFIX T4)1 1TO-220 TO-220FPAPPLICATIONS HIGH RUGGEDNESS ELECTRONICI
bu941ztfp-zt bub941zt.pdf
BU941ZT/BU941ZTFPBUB941ZTHIGH VOLTAGE IGNITION COIL DRIVERNPN POWER DARLINGTON VERY RUGGED BIPOLAR TECHNOLOGY BUILT IN CLAMPING ZENER HIGH OPERATING JUNCTIONTEMPERATURE WIDE RANGE OF PACKAGES SURFACE-MOUNTING D2PAK (TO-263)3 3POWER PACKAGE IN TUBE (NO SUFFIX)2 2OR IN TAPE & REEL (SUFFIX "T4")1 1TO-220 TO-220FPAPPLICATIONS HIGH RUGGEDNESS ELECTRONICIGNITI
bu941zle3.pdf
Spec. No. : C660E3 Issued Date : 2014.01.09 CYStech Electronics Corp.Revised Date : Page No. : 1/6 NPN Epitaxial Planar Transistor BVCEO 350VBU941ZLE3 IC 15AVCESAT(MAX) 1.6VFeatures High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivalent
bu941ze3.pdf
Spec. No. : C660E3 Issued Date : 2010.02.03 CYStech Electronics Corp.Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BVCEO 350VBU941ZE3 IC 15ARCESAT(MAX) 0.18 Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivale
bu941zf3.pdf
Spec. No. : C660F3 Issued Date : 2010.10.01 CYStech Electronics Corp.Revised Date : 2014.02.13 Page No. : 1/6 NPN Epitaxial Planar Transistor BU941ZF3 Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free lead plating package Applications High ruggedness electronic ignitions Equivalent Circuit Outline TO-263
bu941zfp.pdf
Spec. No. : C660FP Issued Date : 2008.05.20 CYStech Electronics Corp.Revised Date : Page No. : 1/5 NPN Epitaxial Planar Transistor BU941ZFP Features High BVCEO Low VCE(SAT) High current capability Built-in clamping zener Pb-free package Applications High ruggedness electronic ignitions Equivalent Circuit Outline BU941ZFP TO-220FP C B E B
bu941zl.pdf
isc Silicon NPN Darlington Power Transistor BU941ZLDESCRIPTIONBuilt In Clamping ZenerHigh Operating Junction TemperatureMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electric ignitionsABSOLUTE MAXIMUM RATINGS(TB B=25)aSYMBOL PARAMETER VALUE UNITV Collector-Emitter Voltage 350 VCEOVB Emitter-Base
bu941zt.pdf
isc Silicon NPN Power Transistor BU941ZTDESCRIPTIONHigh VoltageDARLINGTONMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh ruggedness electronic ignitionsHigh voltage ignition coil driverABSOLUTE MAXIMUM RATINGS (T =25)aSYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 500 VCBOV Collector-Emitter Voltage
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: LBC548C | 2SA1635 | NTE176 | A733-MS
History: LBC548C | 2SA1635 | NTE176 | A733-MS
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050