BUH51 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUH51
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 50 W
Tensión colector-base (Vcb): 800 V
Tensión colector-emisor (Vce): 500 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 23 MHz
Capacitancia de salida (Cc): 100 pF
Ganancia de corriente contínua (hFE): 8
Encapsulados: TO126
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BUH51 datasheet
buh51.pdf
BUH51 SWITCHMODEt NPN Silicon Planar Power Transistor The BUH51 has an application specific state-of-art die designed for use in 50 W Halogen electronic transformers. This power transistor is specifically designed to sustain the large http //onsemi.com inrush current during either the startup conditions or under a short circuit across the load. POWER TRANSISTOR Improved Efficiency
buh51rev.pdf
Order this document MOTOROLA by BUH51/D SEMICONDUCTOR TECHNICAL DATA BUH51 Advance Information POWER TRANSISTOR 3 AMPERES SWITCHMODE NPN Silicon 800 VOLTS Planar Power Transistor 50 WATTS The BUH51 has an application specific state of art die designed for use in 50 Watts Halogen electronic transformers. This power transistor is specifically designed to sustain the large inrush
buh515.pdf
BUH515 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY U.L. RECOGNISED ISOWATT218 PACKAGE (U.L. FILE # E81734 (N)). APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS 3 SWITCH MODE POWER SUPPLIES 2 1 ISOWATT218 DESCRIPTION The BUH515 is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses a Hollo
buh515fp.pdf
BUH515FP HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR HIGH VOLTAGE CAPABILITY FULLY MOLDED ISOLATED PACKAGE 2000 V DC ISOLATION (U.L. COMPLIANT) APPLICATIONS HORIZONTAL DEFLECTION FOR COLOUR TV AND MONITORS SWITCH MODE POWER SUPPLIES 3 2 1 TO-220FP DESCRIPTION The BUH515FP is manufactured using Multiepitaxial Mesa technology for cost-effective high performance and uses
Otros transistores... BUH313, BUH313D, BUH315, BUH315D, BUH315DXI, BUH415DXI, BUH417, BUH50, 2SC4793, BUH513, BUH515, BUH515D, BUH515DXI, BUH515XI, BUH517, BUH517D, BUH615
History: 2N2393
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