BUL38D Todos los transistores

 ..1. Size:225K  st
 bul38d.pdf

BUL38D High voltage fast-switching NPN power transistor Features High voltage capability Low spread of dynamic parameters Minimum lot-to-lot spread for reliable operation Very high switching speed High ruggedness 3 2 Fully characterized at 125 C 1 Integrated antiparallel collector-emitter diode TO-220 Applications Electronic transformers for halo

 ..2. Size:220K  inchange semiconductor
 bul38d.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor BUL38D DESCRIPTION Collector Emitter Sustaining Voltage V = 450V(Min.) CEO(SUS) Collector Saturation Voltage V = 0.5V(Max) @ I = 1.0A CE(sat) C Very High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in lighting applications and

 9.1. Size:79K  st
 bul381 bul382.pdf

BUL381D BUL382D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE 3 2 1 APPLICATIONS ELECTRONIC TRANSFORMERS FOR TO-220 HALOGEN LAMPS ELECTRONIC

 9.2. Size:72K  st
 bul381-2.pdf

BUL381 BUL382 HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STM PREFERRED SALESTYPES HIGH VOLTAGE CAPABILITY MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED FULLY CHARACTERISED AT 125oC APPLICATIONS ELECTRONIC BALLASTS FOR 3 2 FLUORESCENT LIGHTING 1 SWITCH MODE POWER SUPPLIES TO-220 DESCRIPTION The BUL381 and BUL382 manufactured usin

 9.3. Size:205K  st
 bul381d.pdf

BUL381D HIGH VOLTAGE FAST-SWITCHING NPN POWER TRANSISTOR STMicroelectronics PREFERRED SALESTYPE HIGH VOLTAGE CAPABILITY LOW SPREAD OF DYNAMIC PARAMETERS MINIMUM LOT-TO-LOT SPREAD FOR RELIABLE OPERATION VERY HIGH SWITCHING SPEED LARGE RBSOA INTEGRATED ANTIPARALLEL 3 2 COLLECTOR-EMITTER DIODE 1 APPLICATIONS TO-220 ELECTRONIC TRANSFORMERS FOR HALOGEN LAMPS

 9.4. Size:78K  jmnic
 bul381.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381 DESCRIPTION With TO-220C package High voltage capability Very high switching speed APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter LIMITING VALUES SYMB

 9.5. Size:80K  jmnic
 bul381d.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors BUL381D DESCRIPTION With TO-220C package High voltage capability Very high switching speed Integrated antiparallel collector-emitter diode APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to

 9.6. Size:213K  inchange semiconductor
 bul382d.pdf

isc Silicon NPN Power Transistor BUL382D DESCRIPTION Collector Emitter Sustaining Voltage V = 400V(Min.) CEO(SUS) Low Collector Saturation Voltage V = 0.5V(Max) @ I = 1A CE(sat) C High Switching Speed 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in lighting applications and l

 9.7. Size:120K  inchange semiconductor
 bul381.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL381 DESCRIPTION With TO-220C package High voltage capability Very high switching speed APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maxi

 9.8. Size:121K  inchange semiconductor
 bul381d.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUL381D DESCRIPTION With TO-220C package High voltage ,high speed Integrated antiparallel collector-emitter diode APPLICATIONS Designed for use in lighting applications and low cost switch-mode power supplies. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base

 9.9. Size:281K  inchange semiconductor
 bul382.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUL382 DESCRIPTION Collector Emitter Sustaining Voltage VCEO(SUS) = 400V(Min.) Low Collector Saturation Voltage VCE(sat) = 0.5V(Max) @ IC= 1A Very High Switching Speed APPLICATIONS Designed for use in lighting applications and low cost switch- mode power supplies. ABSOLUTE MAXIMU