2N325 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

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2N3251CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 60V A =(0.04 0.004

DUAL PNP SWITCHING TRANSISTORS 2N3251DCSM Dual Silicon Planer PNP Transistors Hermetic Ceramic Surface Mount Package Designed For Small Signal, General Purpose and Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (Each Side, TA = 25C unless otherwise stated) Each Side Total Device VCBO Collector Base Voltage -50V VCEO C

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Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251,A TO-18 Metal Can PackageDesigned for Small Signal, General Purpose and Switching ApplicationsABSOLUTE MAXIMUM RATINGS2N3250 2N3250ADESCRIPTION SYMBOL UNIT2N3251 2N3251AVCEOCollector Emitter Voltage 40 60 VVCBOCollector Bas

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland. 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/323 DEVICES LEVELS 2N3250A 2N3251A JAN 2N3250AUB 2N3251AUB JANTX JAN