BUL54BFI Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUL54BFI

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 30 W

Tensión colector-base (Vcb): 800 V

Tensión colector-emisor (Vce): 400 V

Corriente del colector DC máxima (Ic): 5 A

CARACTERÍSTICAS ELÉCTRICAS

Encapsulados: TO220F

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BUL54BFI datasheet

 8.1. Size:10K  semelab
 bul54bsmd.pdf pdf_icon

BUL54BFI

BUL54BSMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 400V IC = 5A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26 (

 9.1. Size:20K  semelab
 bul54asmd.pdf pdf_icon

BUL54BFI

BUL54ASMD ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED DIE HIGH VOLTAGE FAST SWITCHING (tf = 40ns) EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE HIGH ENERGY RATING E

 9.2. Size:15K  semelab
 bul54a-sm.pdf pdf_icon

BUL54BFI

BUL54A SM SEME LAB ADVANCED MECHANICAL DATA DISTRIBUTED BASE DESIGN Dimensions in mm HIGH VOLTAGE HIGH SPEED NPN SILICON POWER TRANSISTOR SEMEFAB DESIGNED AND DIFFUSED DIE 11.5 2.0 0.25 HIGH VOLTAGE 3.5 3.5 3.0 FAST SWITCHING (tf = 40ns) EXCEPTIONAL HIGH TEMPERATURE PERFORMANCE 1 3 HIGH ENERGY RATING EFFICIENT POWER SWITCHING 2 MILITARY AND HI REL

 9.3. Size:137K  semelab
 bul54a-to5.pdf pdf_icon

BUL54BFI

MOSTRAR MÁS

Otros transistores... BUL52AFI, BUL52B, BUL52BFI, BUL53A, BUL53B, BUL54A, BUL54AFI, BUL54B, 431, BUL55A, BUL55B, BUL56A, BUL56B, BUL57, BUL57A, BUL57PI, BUL58A