BUL56A Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUL56A
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 85 W
Tensión colector-base (Vcb): 350 V
Tensión colector-emisor (Vce): 160 V
Corriente del colector DC máxima (Ic): 16 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 8
Encapsulados: TO220
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BUL56A datasheet
bul56asmd.pdf
BUL56ASMD Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89 (0.035) min. Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142) 3.41 (0.134) 3.41 (0.134) Max. Package for High Reliability Applications 1 3 Bipolar NPN Device. 2 VCEO = 160V IC = 16A 9.67 (0.381) All Semelab hermetically sealed products 9.38 (0.369) 0.50 (0.020) 0.26
bul56bsmd.pdf
BUL56BSMD NPN MECHANICAL DATA FAST SWITCHING Dimensions in mm TRANSISTOR FEATURES LOW SATURATION VOLTAGE ULTRA FAST TURN ON AND TURN OFF SWITCHING (tr / tf = 40ns) APPLICATIONS High speed TO220 transistor suited for low voltage a
bul56b.pdf
Product Specification www.jmnic.com Silicon Power Transistors BUL52B DESCRIPTION With TO-220C package High voltage Fast switching High energy rating APPLICATIONS Designed for use in electronic ballast applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 emitter LIMITING VALUES SYMBOL PARAMETER CONDITIONS VALUE UNIT V
bul56b.pdf
isc Silicon NPN Power Transistor BUL56B DESCRIPTION Collector Emitter Sustaining Voltage V = 100V(Min.) CEO(SUS) Collector Saturation Voltage V = 0.2V(Max) @ I = 1A CE(sat) C High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in electronic ballast applications. ABSOLUTE MAXIMUM RATING
Otros transistores... BUL53A, BUL53B, BUL54A, BUL54AFI, BUL54B, BUL54BFI, BUL55A, BUL55B, MJE350, BUL56B, BUL57, BUL57A, BUL57PI, BUL58A, BUL58B, BUL58D, BUL59A
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