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2N3250 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N3250
   Material: Si
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.36 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 40 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.2 A
   Temperatura operativa máxima (Tj): 180 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 250 MHz
   Capacitancia de salida (Cc): 6 pF
   Ganancia de corriente contínua (hfe): 50
   Paquete / Cubierta: TO18

 Búsqueda de reemplazo de transistor bipolar 2N3250

 

2N3250 Datasheet (PDF)

 ..1. Size:88K  central
2n3250 2n3251.pdf

2N3250 2N3250

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

 ..2. Size:183K  bocasemi
2n3250 2n3251-a.pdf

2N3250 2N3250

Boca Semiconductor Corp. BSC http://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.comhttp://www.bocasemi.com

 ..3. Size:208K  cdil
2n3250 1.pdf

2N3250 2N3250

Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR SWITCHING TRANSISTORS 2N3250, A/ 2N3251,A TO-18 Metal Can PackageDesigned for Small Signal, General Purpose and Switching ApplicationsABSOLUTE MAXIMUM RATINGS2N3250 2N3250ADESCRIPTION SYMBOL UNIT2N3251 2N3251AVCEOCollector Emitter Voltage 40 60 VVCBOCollector Bas

 0.1. Size:129K  microsemi
2n3250aub.pdf

2N3250 2N3250

TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 Gort Road Business Park, Ennis, Co. Clare, Ireland. 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Tel: +353 (0) 65 6840044 Fax: +353 (0) 65 6822298 Website: http://www.microsemi.com PNP SILICON LOW POWER TRANSISTOR Qualified per MIL-PRF-19500/323 DEVICES LEVELS 2N3250A 2N3251A JAN 2N3250AUB 2N3251AUB JANTX JAN

 9.1. Size:11K  semelab
2n3251csm.pdf

2N3250

2N3251CSMDimensions in mm (inches). Bipolar PNP Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar PNP Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 60V A =(0.04 0.004

 9.2. Size:417K  semelab
2n3251dcsm.pdf

2N3250 2N3250

DUAL PNP SWITCHING TRANSISTORS 2N3251DCSM Dual Silicon Planer PNP Transistors Hermetic Ceramic Surface Mount Package Designed For Small Signal, General Purpose and Switching Applications Screening Options Available ABSOLUTE MAXIMUM RATINGS (Each Side, TA = 25C unless otherwise stated) Each Side Total Device VCBO Collector Base Voltage -50V VCEO C

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

 

 
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