BUP22C . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUP22C
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 125 W
   Tensión colector-base (Vcb): 850 V
   Tensión colector-emisor (Vce): 500 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hfe): 25
Paquete / Cubierta: TOP3

Búsqueda de reemplazo de transistor bipolar BUP22C

BUP22C Datasheet (PDF)

9.1. Size:142K inchange semiconductor
bup22b c.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUP22B/C DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)-BUP22B = 450V(Min)-BUP22C High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching- regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMET

9.2. Size:212K inchange semiconductor
bup22.pdf

isc Silicon NPN Power Transistor BUP22DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 300V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in converters, inverters, switching-regulators, motor control systems etc.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETE

9.3. Size:144K inchange semiconductor
bup22bf cf.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUP22BF/CF DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 400V(Min)-BUP22BF = 450V(Min)-BUP22CF High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching- regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PAR

9.4. Size:256K inchange semiconductor
bup22a.pdf

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUP22A DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 350V(Min) High Switching Speed APPLICATIONS Designed for use in converters, inverters, switching- regulators, motor control systems etc. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER VALUE UNITVCES Collector-

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: BDS29BN2

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050