BUR51 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUR51

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 350 W

Tensión colector-base (Vcb): 300 V

Tensión colector-emisor (Vce): 200 V

Tensión emisor-base (Veb): 10 V

Corriente del colector DC máxima (Ic): 60 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO3

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BUR51 datasheet

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 bur51.pdf pdf_icon

BUR51

BUR51 HIGH CURRENT NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR DESCRIPTION The BUR51 is a silicon multiepitaxial planar NPN transistor in modified Jedec TO-3 metal case, intented for use in switching and linear applications in military and industrial equipment. 1 2 TO-3 INTERNAL SCHEMATIC DIAGRAM ABSOLUTE MAXIMUM RATINGS Symbol Parameter Value Unit V

 ..2. Size:213K  inchange semiconductor
 bur51.pdf pdf_icon

BUR51

isc Silicon NPN Power Transistor BUR51 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 200V(Min) CEO(SUS) High Current Capability High Switching Speed Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for low voltage ,high speed,power switching and linear in military and industrial equipment. ABSOLUTE MAXIMUM R

 0.1. Size:10K  semelab
 bur51s.pdf pdf_icon

BUR51

BUR51S Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99) 6.35 (0.25) 26.67 (1.05) 9.15 (0.36) Metal Package. 10.67 (0.42) 11.18 (0.44) 1.52 (0.06) 3.43 (0.135) 1 2 3 (case) 3.84 (0.151) 4.09 (0.161) 7.92 (0.312) 12.70 (0.50) TO3 (TO204AE) PINOUTS 1 Base 2 Emitter Case - Collector Parameter Test Conditions Min. Typ. Max

Otros transistores... BUR24, BUR30, BUR31, BUR32, BUR33, BUR34, BUR50, BUR50S, BC556, BUR52, BUR53, BUR54, BUR55, BUR56, BUR60, BUR606, BUR606D