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BUV26F . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUV26F
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 18 W
   Tensión colector-base (Vcb): 200 V
   Tensión colector-emisor (Vce): 100 V
   Corriente del colector DC máxima (Ic): 14 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 10
   Paquete / Cubierta: TO220F

 Búsqueda de reemplazo de transistor bipolar BUV26F

 

BUV26F Datasheet (PDF)

 ..1. Size:107K  inchange semiconductor
buv26f af.pdf

BUV26F
BUV26F

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUV26F/AF DESCRIPTION Collector-Emitter Sustaining Voltage- : VCEO(SUS) = 90V(Min)- BUV26F 100V(Min)- BUV26AF High Switching Speed APPLICATIONS Designed for fast switching applications such as high frequency and efficiency converters, switching regulators and motor control. ABSOLUTE

 9.1. Size:57K  st
buv26.pdf

BUV26F
BUV26F

BUV26MEDIUM POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR FAST SWITCHING SPEED LOW COLLECTOR EMITTER SATURATION APPLICATIONS SWITCHING REGULATORS MOTOR CONTROL 321DESCRIPTION The BUV26 is a Multiepitaxial Planar NPNTO-220Transistor in TO-220 package. It is intended foruse in high frequency and efficency converters,s

 9.2. Size:45K  onsemi
buv26-d.pdf

BUV26F
BUV26F

BUV26Switchmode Series NPNSilicon Power TransistorDesigned for high-speed applications.Featureshttp://onsemi.com Switchmode Power Supplies High Frequency Converters12 AMPERES Relay DriversNPN SILICON DriverPOWER TRANSISTORS Pb-Free Package is Available*90 VOLTS, 85 WATTSMAXIMUM RATINGS (TJ = 25C unless otherwise noted)MARKINGRating Symbol Value

 9.3. Size:214K  inchange semiconductor
buv26.pdf

BUV26F
BUV26F

isc Silicon NPN Power Transistors BUV26DESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for fast switching applications such as highfrequency and efficiency converters, switching regulatorsand motor control.ABSOLUTE MAXIMU

 9.4. Size:117K  inchange semiconductor
buv26a.pdf

BUV26F
BUV26F

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUV26A DESCRIPTION With TO-220C package Low collector saturation voltage Fast switching speed APPLICATIONS For use in high frequency and efficiency converters,switching regulators and motor control PINNING PIN DESCRIPTION1 Base Collector;connected to 2 mounting base 3 Emitter

 9.5. Size:214K  inchange semiconductor
buv26g.pdf

BUV26F
BUV26F

isc Silicon NPN Power Transistors BUV26GDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 90V(Min)CEO(SUS)High Switching SpeedMinimum Lot-to-Lot variations for robust device performanceand reliable operationAPPLICATIONSDesigned for fast switching applications such as highfrequency and efficiency converters, switching regulatorsand motor control.ABSOLUTE MAXIM

Otros transistores... 2SA1179M4 , 2SA1179M5 , 2SA1179M6 , 2SA1179M7 , 2SA118 , 2SA1180 , 2SA1180A , 2SA1182 , 2N3055 , 2SA1182Y , 2SA1183 , 2SA1184 , 2SA1185 , 2SA1186 , 2SA1186O , 2SA1186P , 2SA1186Y .

 

 
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