BUV48I . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistor BUV48IDESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ulary suited for line-operated swtchmode

Order this documentMOTOROLAby BUV48/DSEMICONDUCTOR TECHNICAL DATABUV48BUV48ASWITCHMODE II SeriesNPN Silicon Power Transistors15 AMPERESThe BUV48/BUV48A transistors are designed for highvoltage, highspeed, powerNPN SILICONswitching in inductive circuits where fall time is critical. They are particularly suited forPOWER TRANSISTORSlineoperated switchmode applica

BUV48A High voltage fast switching NPN power transistorFeatures High current capability Fast switching speedApplications Switching mode power supplies3 Flyback and forward single transistor low power 21converterTO-247DescriptionThe device is a multiepitaxial mesa NPN Figure 1. Internal schematic diagramtransistor mounted in TO-247 plastic package. I

BUX48C/BUV48CBUV48CFIHIGH VOLTAGE FAST-SWITCHINGNPN POWER TRANSISTORS SGS-THOMSON PREFERRED SALESTYPES NPN TRANSISTORS HIGH VOLTAGE CAPABILITY FAST SWITCHING SPEED 1 3APPLICATIONS 2 LINEAR AND SWITCHING INDUSTRIAL 2 1EQUIPMENTTO-3 TO-218DESCRIPTION The BUX48C, BUV48C and BUV48CFI are3silicon multiepitaxial mesa NPN transistors21mounted respectively

BUX48/48ABUV48A/V48AFI HIGH POWER NPN SILICON TRANSISTORS STMicroelectronics PREFERREDSALESTYPES NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY1 3 FAST SWITCHING SPEED22 1APPLICATIONS SWITCH MODE POWER SUPPLIESTO-3 TO-218 FLYBACK AND FORWARD SINGLETRANSISTOR LOW POWER CONVERTERS321DESCRIPTIONISOWATT218The BUX48/A, BUV48A and BUV48

BUV48, BUV48ANPN SILICON POWER TRANSISTORS Rugged Triple-Diffused Planar ConstructionSOT-93 PACKAGE(TOP VIEW) 15 A Continuous Collector CurrentB1 1000 Volt Blocking CapabilityC 23EPin 2 is in electrical contact with the mounting base.MDTRAAAabsolute maximum ratings at 25C case temperature (unless otherwise noted)RATING SYMBOL VALUE UNITBUV48 850Colle

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor BUV48A DESCRIPTION High Voltage Capability High Current Capability Fast Switching Speed APPLICATIONS Designed for high-voltage,high-speed, power switching in inductive circuits where fall time is critical. They are partic- ulary suited for line-operated swtchmode applications such as:

INCHANGE Semiconductorisc Silicon NPN Power Transistor BUV48FIDESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ulary suited fo

isc Silicon NPN Power Transistor BUV48CFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and industrial applications fromsingle and three-phase mains.Absolute maximum ratings(Ta=25

isc Silicon NPN Power Transistor BUV48BDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 600V (Min)CEO(SUS)High Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and industrial applications fromsingle and three-phase mains.Absolute maximum ratings(Ta=25

isc Silicon NPN Power Transistor BUV48DESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSSwitching regulatorsInvertersSolenoid and relay driversMotor controlsDeflection circuitsAbsolute maximum ratings(Ta=25)SYMBOL PARAMETER VALU

isc Silicon NPN Power Transistor BUV48BFIDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 600V (Min)CEO(SUS)High Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and industrial applications fromsingle and three-phase mains.Absolute maximum ratings(Ta=25

isc Silicon NPN Power Transistor BUV48TDESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ulary suited for line-operated swtchmode

isc Silicon NPN Power Transistor BUV48AFIDESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high-voltage,high-speed, power switching ininductive circuits where fall time is critical. They are partic-ulary suited for line-operated switc

isc Silicon NPN Power Transistor BUV48CDESCRIPTIONCollector-Emitter Sustaining Voltage-: V = 700V (Min)CEO(SUS)High Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for switching and industrial applications fromsingle and three-phase mains.Absolute maximum ratings(Ta=25