BUW131A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

isc Silicon NPN Power Transistors BUW131/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 450V (Min)-BUW131 CEO(SUS) 500V (Min)-BUW131A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW131/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V (Min)-BUW131 500V (Min)-BUW131A APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER MAX UNIT BUW

isc Silicon NPN Power Transistor BUW131H DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 450V CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT Collect

DISCRETE SEMICONDUCTORS DATA SHEET BUW13F; BUW13AF Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF DESCRIPTION High-voltage, high-speed, ook, halfpage glass-passivated NPN power transistor in

DISCRETE SEMICONDUCTORS DATA SHEET BUW13W; BUW13AW Silicon diffused power transistors 1997 Aug 13 Product specification File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW13W; BUW13AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. ge APPLICATIONS 2 Conv

isc Silicon NPN Power Transistor BUW13W DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850 V CBO V Collector-Emitter

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW132/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V (Min)-BUW132 500V (Min)-BUW132A APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER MAX UNIT BUW

isc Silicon NPN Power Transistor BUW13A DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO V Collector-Emitter

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13 BUW13A DESCRIPTION With TO-3PN package High voltage,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13F BUW13AF DESCRIPTION With TO-3PFa package High voltage;high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter l Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS

isc Silicon NPN Power Transistors BUW132/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 450V (Min)-BUW132 CEO(SUS) 500V (Min)-BUW132A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a

isc Silicon NPN Power Transistor BUW13F DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850 V CBO V Collector-Emitter

isc Silicon NPN Power Transistor BUW133 DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 450V CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT Collector

isc Silicon NPN Power Transistor BUW13AF DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO V Collector-Emitter

Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13W BUW13AW DESCRIPTION With TO-247 package High voltage,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum rating

isc Silicon NPN Power Transistor BUW133A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 500V CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT Collecto

isc Silicon NPN Power Transistor BUW13 DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850 V CBO V Collector-Emitter V

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW133/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V (Min)-BUW133 500V (Min)-BUW133A APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER MAX UNIT BUW

isc Silicon NPN Power Transistor BUW132H DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 450V CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT Collect

isc Silicon NPN Power Transistor BUW133H DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 430V CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT Collect