BUW133A Todos los transistores

 

BUW133A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: BUW133A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 135 W
   Tensión colector-base (Vcb): 1000 V
   Tensión colector-emisor (Vce): 500 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS


   Ganancia de corriente contínua (hfe): 5
   Paquete / Cubierta: TOP3

 Búsqueda de reemplazo de transistor bipolar BUW133A

 

BUW133A Datasheet (PDF)

 ..1. Size:212K  inchange semiconductor
buw133a.pdf

BUW133A
BUW133A

isc Silicon NPN Power Transistor BUW133ADESCRIPTIONHigh Switching SpeedCollector-Emitter Sustaining Voltage-: V = 500VCEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in very fast switching applications ininductive circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITCollecto

 8.1. Size:213K  inchange semiconductor
buw133.pdf

BUW133A
BUW133A

isc Silicon NPN Power Transistor BUW133DESCRIPTIONHigh Switching SpeedCollector-Emitter Sustaining Voltage-: V = 450VCEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in very fast switching applications ininductive circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITCollector

 8.2. Size:105K  inchange semiconductor
buw133 a.pdf

BUW133A
BUW133A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW133/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 450V (Min)-BUW133 500V (Min)-BUW133A APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25) SYMBOL PARAMETER MAX UNITBUW

 8.3. Size:215K  inchange semiconductor
buw133h.pdf

BUW133A
BUW133A

isc Silicon NPN Power Transistor BUW133HDESCRIPTION High Switching SpeedCollector-Emitter Sustaining Voltage-: V = 430VCEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in very fast switching applications ininductive circuits.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER MAX UNITCollect

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

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History: 2N5118

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