BUW13F Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUW13F
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 37 W
Tensión colector-base (Vcb): 850 V
Tensión colector-emisor (Vce): 400 V
Corriente del colector DC máxima (Ic): 15 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hFE): 10
Encapsulados: SOT199
Búsqueda de reemplazo de BUW13F
- Selecciónⓘ de transistores por parámetros
BUW13F datasheet
..1. Size:85K philips
buw13f 1.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET BUW13F; BUW13AF Silicon diffused power transistors 1997 Aug 13 Product specification Supersedes data of February 1996 File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW13F; BUW13AF DESCRIPTION High-voltage, high-speed, ook, halfpage glass-passivated NPN power transistor in
..2. Size:125K inchange semiconductor
buw13f buw13af.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13F BUW13AF DESCRIPTION With TO-3PFa package High voltage;high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector 3 Emitter l Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS
..3. Size:216K inchange semiconductor
buw13f.pdf
isc Silicon NPN Power Transistor BUW13F DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850 V CBO V Collector-Emitter
9.1. Size:79K philips
buw13w buw13aw 1.pdf
DISCRETE SEMICONDUCTORS DATA SHEET BUW13W; BUW13AW Silicon diffused power transistors 1997 Aug 13 Product specification File under Discrete Semiconductors, SC06 Philips Semiconductors Product specification Silicon diffused power transistors BUW13W; BUW13AW DESCRIPTION High-voltage, high-speed, glass-passivated NPN power transistor in a SOT429 package. ge APPLICATIONS 2 Conv
9.2. Size:213K inchange semiconductor
buw13w.pdf
isc Silicon NPN Power Transistor BUW13W DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850 V CBO V Collector-Emitter
9.3. Size:105K inchange semiconductor
buw132 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW132/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V (Min)-BUW132 500V (Min)-BUW132A APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER MAX UNIT BUW
9.4. Size:214K inchange semiconductor
buw13a.pdf
isc Silicon NPN Power Transistor BUW13A DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO V Collector-Emitter
9.5. Size:214K inchange semiconductor
buw131 buw131a.pdf
isc Silicon NPN Power Transistors BUW131/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 450V (Min)-BUW131 CEO(SUS) 500V (Min)-BUW131A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.6. Size:120K inchange semiconductor
buw13 buw13a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13 BUW13A DESCRIPTION With TO-3PN package High voltage,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-3PN) and symbol 3 Emitter Absolute maximum ratings(
9.7. Size:217K inchange semiconductor
buw132 buw132a.pdf
isc Silicon NPN Power Transistors BUW132/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 450V (Min)-BUW132 CEO(SUS) 500V (Min)-BUW132A Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a
9.8. Size:105K inchange semiconductor
buw131 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW131/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V (Min)-BUW131 500V (Min)-BUW131A APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER MAX UNIT BUW
9.9. Size:213K inchange semiconductor
buw133.pdf
isc Silicon NPN Power Transistor BUW133 DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 450V CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT Collector
9.10. Size:212K inchange semiconductor
buw13af.pdf
isc Silicon NPN Power Transistor BUW13AF DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 1000 V CBO V Collector-Emitter
9.11. Size:214K inchange semiconductor
buw131h.pdf
isc Silicon NPN Power Transistor BUW131H DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 450V CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT Collect
9.12. Size:123K inchange semiconductor
buw13w buw13aw.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUW13W BUW13AW DESCRIPTION With TO-247 package High voltage,high speed APPLICATIONS Converters Inverters Switching regulators Motor control systems PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Collector Fig.1 simplified outline (TO-247) and symbol 3 Emitter Absolute maximum rating
9.13. Size:212K inchange semiconductor
buw133a.pdf
isc Silicon NPN Power Transistor BUW133A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 500V CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT Collecto
9.14. Size:214K inchange semiconductor
buw13.pdf
isc Silicon NPN Power Transistor BUW13 DESCRIPTION High Voltage High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Converters Inverters Switching regulators Motor control systems ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 850 V CBO V Collector-Emitter V
9.15. Size:105K inchange semiconductor
buw133 a.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW133/A DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- VCEO(SUS)= 450V (Min)-BUW133 500V (Min)-BUW133A APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMBOL PARAMETER MAX UNIT BUW
9.16. Size:214K inchange semiconductor
buw132h.pdf
isc Silicon NPN Power Transistor BUW132H DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 450V CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT Collect
9.17. Size:215K inchange semiconductor
buw133h.pdf
isc Silicon NPN Power Transistor BUW133H DESCRIPTION High Switching Speed Collector-Emitter Sustaining Voltage- V = 430V CEO(SUS) Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in very fast switching applications in inductive circuits. ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER MAX UNIT Collect
Otros transistores... BUW132, BUW132A, BUW132H, BUW133, BUW133A, BUW133H, BUW13A, BUW13AF, A1013, BUW14, BUW16, BUW17, BUW18, BUW22, BUW22A, BUW22AP, BUW22P
