BUW41A Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUW41A

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 100 W

Tensión colector-base (Vcb): 550 V

Tensión colector-emisor (Vce): 350 V

Tensión emisor-base (Veb): 8 V

Corriente del colector DC máxima (Ic): 10 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 15 MHz

Capacitancia de salida (Cc): 300 pF

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO220

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BUW41A datasheet

 ..1. Size:209K  inchange semiconductor
 buw41 buw41a buw41b.pdf pdf_icon

BUW41A

isc Silicon NPN Power Transistors BUW41/A/B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min)- BUW41 CEO(SUS) = 350V(Min)- BUW41A = 400V(Min)- BUW41B High Switching Speed High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and switching applications. ABSOLUTE MAXIM

 9.1. Size:209K  inchange semiconductor
 buw41b.pdf pdf_icon

BUW41A

isc Silicon NPN Power Transistor BUW41B DESCRIPTION High Voltage High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Off-line power supplies High voltage inverters Switching regulators ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter

 9.2. Size:106K  inchange semiconductor
 buw41 a b.pdf pdf_icon

BUW41A

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW41/A/B DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 300V(Min)- BUW41 = 350V(Min)- BUW41A = 400V(Min)- BUW41B High Switching Speed High Power Dissipation APPLICATIONS Designed for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB

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