BUW41B Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUW41B
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 100 W
Tensión colector-base (Vcb): 650 V
Tensión colector-emisor (Vce): 400 V
Tensión emisor-base (Veb): 8 V
Corriente del colector DC máxima (Ic): 10 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 15 MHz
Capacitancia de salida (Cc): 300 pF
Ganancia de corriente contínua (hFE): 10
Encapsulados: TO220
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BUW41B datasheet
buw41b.pdf
isc Silicon NPN Power Transistor BUW41B DESCRIPTION High Voltage High Switching Speed Low Collector Saturation Voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Off-line power supplies High voltage inverters Switching regulators ABSOLUTE MAXIMUM RATINGS (T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Emitter
buw41 buw41a buw41b.pdf
isc Silicon NPN Power Transistors BUW41/A/B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 300V(Min)- BUW41 CEO(SUS) = 350V(Min)- BUW41A = 400V(Min)- BUW41B High Switching Speed High Power Dissipation Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high voltage and switching applications. ABSOLUTE MAXIM
buw41 a b.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUW41/A/B DESCRIPTION Collector-Emitter Sustaining Voltage- VCEO(SUS) = 300V(Min)- BUW41 = 350V(Min)- BUW41A = 400V(Min)- BUW41B High Switching Speed High Power Dissipation APPLICATIONS Designed for high voltage and switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25 ) SYMB
Otros transistores... BUW37, BUW38, BUW39, BUW40, BUW40A, BUW40B, BUW41, BUW41A, B647, BUW42, BUW42A, BUW42AP, BUW42APFI, BUW42P, BUW42PFI, BUW44, BUW45
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