BUX10P . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUX10P
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 150 W
Tensión colector-base (Vcb): 160 V
Tensión colector-emisor (Vce): 125 V
Tensión emisor-base (Veb): 7 V
Corriente del colector DC máxima (Ic): 25 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 8 MHz
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TOP3
Búsqueda de reemplazo de transistor bipolar BUX10P
BUX10P Datasheet (PDF)
bux10p.pdf
isc Silicon NPN Power Transistor BUX10PDESCRIPTIONHigh Switching SpeedHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlLinear and switching industrial equipmentAbsolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 160 VCBOCollector-Emitter Voltage
bux10.pdf
BUX10HIGH POWER NPN SILICON TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS MOTOR CONTROL 1 LINEAR AND SWITCHING INDUSTRIAL2EQUIPMENT DESCRIPTION TO-3The BUX10 is a silicon Multi-Epitaxial PlanarNPN transistor in Jedec TO-3 metal case,intended for use in switching and linearappl
bux10.pdf
isc Silicon NPN Power Transistor BUX10DESCRIPTIONHigh Switching SpeedHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSMotor controlLinear and switching industrial equipmentAbsolute maximum ratings(Ta=25)SYMBOL PARAMETER VALUE UNITV Collector-Base Voltage 160 VCBOCollector-Emitter VoltageV
bux10a.pdf
isc Silicon NPN Power Transistor BUX10ADESCRIPTIONHigh Switching SpeedHigh Current CapabilityMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for control amplifiers and power switching circuits,such as converters, inverters, switching regulators, andswitching-control amplifiers.Absolute maximum ratings(Ta=25)S
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050 | HSA1037AKS