BUX41A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUX41A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 120 W
   Tensión colector-base (Vcb): 250 V
   Tensión colector-emisor (Vce): 200 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 8 MHz
   Ganancia de corriente contínua (hfe): 8
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar BUX41A

BUX41A Datasheet (PDF)

9.1. Size:122K motorola
bux41rev.pdf

Order this documentMOTOROLAby BUX41/DSEMICONDUCTOR TECHNICAL DATABUX41SWITCHMODE Series15 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high speed, high current, high power applications.METAL TRANSISTOR Very fast switching times: 200 VOLTSTF max. = 0.4 s at IC = 8 A 120 WATTS

9.2. Size:124K comset
bux41.pdf

NPN BUX41 HIGH CURRENT, HIGH SPEED, HIGH POWER HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTORTRANSISTORThe BUX41 is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in switching and linear applications in military and industrial equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitVCEO Collector-Emitter Voltag

9.3. Size:205K inchange semiconductor
bux41.pdf

isc Silicon NPN Power Transistor BUX41DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High Current CapabilityGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current, high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

9.4. Size:206K inchange semiconductor
bux41n.pdf

isc Silicon NPN Power Transistor BUX41NDESCRIPTION Collector-Emitter Voltage-: V = 160V(Min)CEOHigh Current CapabilityGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current, high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 2N1139

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050