BUX41B . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUX41B
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 120 W
   Tensión colector-base (Vcb): 250 V
   Tensión colector-emisor (Vce): 200 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 8 MHz
   Ganancia de corriente contínua (hfe): 16
   Paquete / Cubierta: TO3

Búsqueda de reemplazo de transistor bipolar BUX41B

BUX41B Datasheet (PDF)

9.1. Size:122K motorola
bux41rev.pdf

Order this documentMOTOROLAby BUX41/DSEMICONDUCTOR TECHNICAL DATABUX41SWITCHMODE Series15 AMPERESNPN Silicon Power TransistorNPN SILICONPOWER. . . designed for high speed, high current, high power applications.METAL TRANSISTOR Very fast switching times: 200 VOLTSTF max. = 0.4 s at IC = 8 A 120 WATTS

9.2. Size:124K comset
bux41.pdf

NPN BUX41 HIGH CURRENT, HIGH SPEED, HIGH POWER HIGH CURRENT, HIGH SPEED, HIGH POWER TRANSISTORTRANSISTORThe BUX41 is silicon multiepitaxial planar NPN transistor in Jedec TO-3. They are intended for use in switching and linear applications in military and industrial equipment. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value UnitVCEO Collector-Emitter Voltag

9.3. Size:205K inchange semiconductor
bux41.pdf

isc Silicon NPN Power Transistor BUX41DESCRIPTION Collector-Emitter Sustaining Voltage-: V = 200V(Min)CEO(SUS)High Current CapabilityGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current, high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAME

9.4. Size:206K inchange semiconductor
bux41n.pdf

isc Silicon NPN Power Transistor BUX41NDESCRIPTION Collector-Emitter Voltage-: V = 160V(Min)CEOHigh Current CapabilityGood Linearity of hFEMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for high speed, high current, high powerapplications.ABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNIT

Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .

History: SL5304DCP

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: GN1A3Q | D965-KEHE | 2SD662B | 2SD661A | 2SC3080 | S9018L | S9012J | 2SA73L | 2SA73H | 2SA1015H | WT955 | TS13005CK | TP5001P3 | SS8550W-L | SS8550W-J | SS8550W-H | SS8550E | SS8550D | SS8550C | SS8050E | SS8050D