BUX66C Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUX66C

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 35 W

Tensión colector-base (Vcb): 400 V

Tensión colector-emisor (Vce): 350 V

Corriente del colector DC máxima (Ic): 2 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 15 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO66

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BUX66C datasheet

 ..1. Size:209K  inchange semiconductor
 bux66b bux66c.pdf pdf_icon

BUX66C

isc Silicon PNP Power Transistors BUX66B/C DESCRIPTION Contunuous Collector Current-I = -2A C Power Dissipation-P = 35W @T = 25 D C Collector-Emitter Saturation Voltage- V )= -2.5V(Max)@ I = -1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching and linear amplifier appli- cation

 9.1. Size:151K  inchange semiconductor
 bux66 a.pdf pdf_icon

BUX66C

INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistors BUX66/A DESCRIPTION Contunuous Collector Current-IC= -2A Power Dissipation-PD= 35W @TC= 25 Collector-Emitter Saturation Voltage- VCE(sat)= -2.5V(Max)@ IC = -1A APPLICATIONS Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, s

 9.2. Size:209K  inchange semiconductor
 bux66 bux66a.pdf pdf_icon

BUX66C

isc Silicon PNP Power Transistors BUX66/A DESCRIPTION Contunuous Collector Current-I = -2A C Power Dissipation-P = 35W @T = 25 D C Collector-Emitter Saturation Voltage- V )= -2.5V(Max)@ I = -1A CE(sat C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for high-speed switching and linear amplifier appli- cation f

Otros transistores... BUX61, BUX62, BUX63, BUX64, BUX65, BUX66, BUX66A, BUX66B, TIP42, BUX67, BUX67A, BUX67B, BUX67C, BUX67D, BUX69, BUX70, BUX71