BUX77A . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: BUX77A
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 40 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 80 V
   Tensión emisor-base (Veb): 6 V
   Corriente del colector DC máxima (Ic): 8 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 2.5 MHz
   Ganancia de corriente contínua (hfe): 30
   Paquete / Cubierta: TO66

Búsqueda de reemplazo de transistor bipolar BUX77A

BUX77A Datasheet (PDF)

..1. Size:92K semelab
bux77a bux78a.pdf

SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A High Power Hermetic TO-66 Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available BUX77A BUX78A ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) NPN PNP VCBO Collector Base Voltage 100V -100V VCEO Collector Emitt

..2. Size:208K inchange semiconductor
bux77a.pdf

isc Silicon NPN Power Transistor BUX77ADESCRIPTIONContunuous Collector Current I = 8ACCollector Power Dissipation-: P = 50W @T = 25C CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators and general purposepower ampl

0.1. Size:810K semelab
bux78a-220m bux77a-220m.pdf

SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M BUX78A-220M High Power Hermetic TO220 Isolated Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available BUX77A BUX78A ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) NPN PNP VCBO Collector Base Voltage 100V -100V VCEO

0.2. Size:10K semelab
bux77asmd.pdf

BUX77ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

9.1. Size:10K semelab
bux77smd.pdf

BUX77SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0.

9.2. Size:206K inchange semiconductor
bux77.pdf

isc Silicon NPN Power Transistor BUX77DESCRIPTIONContunuous Collector Current-I = 5ACCollector Power Dissipation-: P = 40W @T = 25C CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators and general purposepower ampli

Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .

History: 17597 | 2N4238

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050