BUX77A-220M . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A-220M BUX78A-220M High Power Hermetic TO220 Isolated Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available BUX77A BUX78A ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) NPN PNP VCBO Collector Base Voltage 100V -100V VCEO

SILICON PLANAR EPITAXIAL NPN/PNP TRANSISTORS BUX77A / BUX78A High Power Hermetic TO-66 Metal Package Ideally suited for Driver Circuits, Switching and Amplifier Applications Screening Options Available BUX77A BUX78A ABSOLUTE MAXIMUM RATINGS (TC = 25C unless otherwise stated) NPN PNP VCBO Collector Base Voltage 100V -100V VCEO Collector Emitt

BUX77ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

isc Silicon NPN Power Transistor BUX77ADESCRIPTIONContunuous Collector Current I = 8ACCollector Power Dissipation-: P = 50W @T = 25C CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in switching regulators and general purposepower ampl