BUX97 Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: BUX97

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 60 W

Tensión colector-base (Vcb): 750 V

Tensión colector-emisor (Vce): 350 V

Corriente del colector DC máxima (Ic): 6 A

Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

Transición de frecuencia (fT): 10 MHz

Ganancia de corriente contínua (hFE): 10

Encapsulados: TO3

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BUX97 datasheet

 ..1. Size:203K  inchange semiconductor
 bux97.pdf pdf_icon

BUX97

isc Silicon NPN Power Transistor BUX97 DESCRIPTION Collector-Emitter Sustaining Voltage- V = 350V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in off-line power supplies and are also well suited for use in a wide range of inverter or converter circuits and pulse-width-mod

 0.1. Size:204K  inchange semiconductor
 bux97b.pdf pdf_icon

BUX97

isc Silicon NPN Power Transistor BUX97B DESCRIPTION Collector-Emitter Sustaining Voltage- V = 450V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in off-line power supplies and are also well suited for use in a wide range of inverter or converter circuits and pulse-width-mo

 0.2. Size:203K  inchange semiconductor
 bux97a.pdf pdf_icon

BUX97

isc Silicon NPN Power Transistor BUX97A DESCRIPTION Collector-Emitter Sustaining Voltage- V = 400V(Min.) CEO(SUS) High Speed Switching Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in off-line power supplies and are also well suited for use in a wide range of inverter or converter circuits and pulse-width-mo

Otros transistores... BUX88, BUX90, BUX91, BUX92, BUX93, BUX94, BUX95, BUX96, BC337, BUX97A, BUX97B, BUX98, BUX98A, BUX98AP, BUX98API, BUX98B, BUX98C