BUX98AP . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: BUX98AP
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 200 W
Tensión colector-base (Vcb): 1000 V
Tensión colector-emisor (Vce): 450 V
Corriente del colector DC máxima (Ic): 24 A
Temperatura operativa máxima (Tj): 200 °C
CARACTERÍSTICAS ELÉCTRICAS
Ganancia de corriente contínua (hfe): 10
Paquete / Cubierta: TOP3
Búsqueda de reemplazo de transistor bipolar BUX98AP
BUX98AP Datasheet (PDF)
bux98ap.pdf
BUX98APHIGH POWER NPN SILICON TRANSISTOR SGS-THOMSON PREFERRED SALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS HIGH FREQUENCY AND EFFICENCYCONVERTERS 3 LINEAR AND SWITCHING INDUSTRIAL21EQUIPMENT DESCRIPTION TO-218 (SOT-93) The BUX98AP is a silicon multiepitaxial mesaNPN transistor in jedec TO-218
bux98ap.pdf
isc Silicon NPN Power Transistor BUX98APDESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency and efficiency convertersLinear and switching industrial equipmentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Coll
bux98apw.pdf
BUX98APWHIGH VOLTAGE NPN POWER TRANSISTOR STMicroelectronics PREFERREDSALESTYPE NPN TRANSISTOR HIGH VOLTAGE CAPABILITY HIGH CURRENT CAPABILITY FAST SWITCHING SPEED APPLICATIONS HIGH FREQUENCY AND EFFICENCY3CONVERTERS 21 LINEAR AND SWITCHING INDUSTRIALEQUIPMENT TO-247DESCRIPTION The BUX98APW is a silicon Multiepitaxial MesaNPN transistor in TO-247 pl
bux98a.pdf
BUX98AHigh power NPN transistorFeatures High voltage capability High current capability Fast switching speed1Applications2 High frequency and efficency convertersTO-3 Linear and switching industrial equipmentType RDescriptionThe BUX98A is a multi-epitaxial mesa NPN Figure 1. Internal schematic diagramtransistor in TO-3 metal case, intended for i
bux98af.pdf
BUX98AFDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed TO3 25.15 (0.99)6.35 (0.25)26.67 (1.05) 9.15 (0.36)Metal Package. 10.67 (0.42)11.18 (0.44) 1.52 (0.06)3.43 (0.135)1 23(case)3.84 (0.151)4.09 (0.161) 7.92 (0.312)12.70 (0.50)TO3 (TO204AE) PINOUTS 1 Base 2 Emitter Case - Collector Parameter Test Conditions Min. Typ. Ma
bux98 bux98a.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors BUX98 BUX98A DESCRIPTION With TO-3 package High voltage capability High current capability Fast switching speed APPLICATIONS High frequency and efficiency converters Linear and switching industrial equipment PINNING (See Fig.2) PIN DESCRIPTION1 Base 2 EmitterFig.1 simplified outlin
bux98a.pdf
isc Silicon NPN Power Transistor BUX98ADESCRIPTIONHigh Voltage CapabilityHigh Current CapabilityFast Switching SpeedMinimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSHigh frequency and efficiency convertersLinear and switching industrial equipmentABSOLUTE MAXIMUM RATINGS(T =25)aSYMBOL PARAMETER VALUE UNITV Colle
Otros transistores... 2SA1771 , 2SA178 , 2SA1790 , 2SA1791 , 2SA1792 , 2SA1793 , 2SA1794 , 2SA1795 , 2N3906 , 2SA1799 , 2SA17H , 2SA18 , 2SA180 , 2SA1800 , 2SA1800O , 2SA1800R , 2SA1800Y .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050