C150 Todos los transistores

 0.1. Size:4609K  1
 cjac150n03.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC150N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 1.6m @10V 30 V 150A 2.1m @4.5V DESCRIPTION 15 FEATURES

 0.2. Size:171K  sanyo
 fc150.pdf

Ordering number EN3965 FC150 PNP/NPN Epitaxial Planar Silicon Composite Transistor Low-Frequency General-Purpose Amp, Driver Applications Features Package Dimensions Composite type with 2 transistors contained in the unit mm CP package currently in use, improving the mount- 2067 ing efficiency greatly. [FC150] The FC150 is formed with two chips, being equiva- lent to the 2

 0.3. Size:38K  fairchild semi
 ksc1507.pdf

KSC1507 Color TV Chroma Output High Collector-Emitter Voltage VCEO=300V Current Gain Bandwidth Product fT=40MHz (Min.) TO-220 1 1.Base 2.Collector 3.Emitter NPN Epitaxial Silicon Transistor Absolute Maximum Ratings TC=25 C unless otherwise noted Symbol Parameter Value Units VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Volta

 0.4. Size:123K  nec
 2sc1505 2sc1506 2sc1507.pdf

 0.5. Size:52K  nec
 2sc1505.pdf

 0.6. Size:2756K  rohm
 rq3c150bc.pdf

RQ3C150BC Pch -20V -37A Power MOSFET Datasheet lOutline l VDSS -20V RDS(on)(Max.) 6.7m HSMT8 ID 37A PD 20W lInner circuit l lFeatures l 1) Low on - resistance 2) High Power Package (HSMT8) 3) Pb-free lead plating ; RoHS compliant 4) Halogen Free 5) 100% Rg and UIS tested lPackaging specifications l Embossed Packing

 0.7. Size:317K  infineon
 bsc150n03ld.pdf

BSC150N03LD G OptiMOS 3 Power-Transistors Product Summary Features V 30 V DS Dual N-channel, logic level R 15 m DS(on),max Fast switching MOSFETs for SMPS I 20 A D PG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

 0.8. Size:589K  infineon
 bsc150n03ld .pdf

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 0.9. Size:319K  infineon
 bsc150n03ldg.pdf

BSC150N03LD G OptiMOS 3 Power-Transistors Product Summary Features V 30 V DS Dual N-channel, logic level R 15 m DS(on),max Fast switching MOSFETs for SMPS I 20 A D PG-TDSON-8 Optimized technology for DC/DC converters Qualified according to JEDEC1) for target applications Excellent gate charge x R product (FOM) DS(on) Very low on-resistance R DS(on

 0.10. Size:50K  panasonic
 2sc1509 e.pdf

Transistor 2SC1509 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA777 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base vo

 0.11. Size:47K  panasonic
 2sc1509.pdf

Transistor 2SC1509 Silicon NPN epitaxial planer type For low-frequency driver amplification Unit mm Complementary to 2SA777 5.9 0.2 4.9 0.2 Features High collector to emitter voltage VCEO. Optimum for the driver stage of a low-frequency and 25 to 30W output amplifier. 0.7 0.1 2.54 0.15 Absolute Maximum Ratings (Ta=25 C) Parameter Symbol Ratings Unit Collector to base vo

 0.12. Size:59K  no
 2sc1501.pdf

 0.13. Size:90K  savantic
 2sc1505 1.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION With TO-220 package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1

 0.14. Size:145K  cdil
 csc1507.pdf

Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN EPITAXIAL SILICON POWER TRANSISTOR CSC1507 TO126 Plastic Package E C B Color TV Chroma Output ABSOLUTE MAXIMUM RATINGS DESCRIPTION SYMBOL VALUE UNIT Collector -Base Voltage VCBO 300 V Collector -Emitter Voltage VCEO 300 V Emitter Base Voltage VEBO 7V Collector Current IC 200 mA Collect

 0.15. Size:4609K  jiangsu
 cjac150n03.pdf

JIANGSU CHANGJING ELECTRONICS TECHNOLOGY CO., LTD PDFN 5 6-8L Plastic-Encapsulate MOSFETS CJAC150N03 N-Channel Power MOSFET ID V(BR)DSS RDS(on)TYP PDFN 5 6-8L 1.6m @10V 30 V 150A 2.1m @4.5V DESCRIPTION 15 FEATURES

 0.16. Size:154K  jmnic
 2sc1505.pdf

JMnic Product Specification Silicon NPN Power Transistors 2SC1505 DESCRIPTION With TO-220 package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.1 simplified outl

 0.17. Size:115K  jmnic
 2sc1507.pdf

Product Specification www.jmnic.com Silicon NPN Power Transistors 2SC1507 DESCRIPTION With TO-220 package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For color TV chroma output applications PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base 3 Emitter Absolute maximum ratings (Ta=25 ) SYMBOL PAR

 0.18. Size:256K  ape
 ap10c150m.pdf

AP10C150M Halogen-Free Product Advanced Power N AND P-CHANNEL ENHANCEMENT Electronics Corp. MODE POWER MOSFET Simple Drive Requirement N-CH BVDSS 100V D2 D2 Low Gate Charge D1 RDS(ON) 150m D1 Fast Switching Performance ID 2.5A G2 S2 RoHS Compliant & Halogen-Free P-CH BVDSS -100V G1 S1 SO-8 RDS(ON) 160m Description ID -2.5A AP10C150 series are from Advanced

 0.19. Size:116K  china
 fhc150.pdf

FHC150 PNP B C D E F G PCM Tc=25 150 W ICM 15 A Tjm 175 Tstg -55 150 V(BR)CBO ICB=2mA 50 100 150 200 250 300 V V(BR)CEO ICE=2mA 50 100 150 200 250 300 V ICBO VCB=20V 2.0 mA ICEO VCE=20V 2.0 mA VBEsat 3.0 V IC=1

 0.20. Size:769K  kexin
 kxc1504.pdf

SMD Type Transistors NPN Transistors KXC1504 Features 1.70 0.1 Collector Power Dissipation PC=0.5W Collector Current IC=1.5A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 40 V Collector-emitter voltage VCEO 25 V Emitter-base voltage VEBO 5 V Collector current IC 1.5 A

 0.21. Size:628K  kexin
 kxc1502.pdf

SMD Type Transistors NPN Transistors KXC1502 1.70 0.1 Features Collector Power Dissipation PC=0.5W Collector Current IC=1.5A 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Collector Current -Continu

 0.22. Size:1183K  magnachip
 mpmc150b120rh.pdf

MPMC150B120RH NPT & Rugged Type 1200V IGBT Module General Description Features MagnaChip s IGBT Module 7DM-2 package BV = 1200V CES Low Conduction Loss V = 2.8V (typ.) CE(sat) devices are optimized to reduce losses and Fast & Soft Anti-Parallel FWD switching noise in high frequency power Short circuit rated Min. 10us at TC=100 Isolation Typ

 0.23. Size:179K  inchange semiconductor
 2sc1504.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1504 DESCRIPTION With TO-66 Package Low collector saturation voltage Minimum Lot-to-Lot variations for robust device performance and reliable operation. APPLICATIONS Designed for switching and wide-band amplifier applications ABSOLUTE MAXIMUM RATINGS(T =25 ) a SYMBOL PARAMETER VALUE UNIT V Collector-Base Voltage 4

 0.24. Size:120K  inchange semiconductor
 2sc1501.pdf

Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2SC1501 DESCRIPTION With TO-126 package High breakdown voltage Large power dissipation APPLICATIONS For medium power amplifier applications PINNING PIN DESCRIPTION 1 Emitter 2 Collector 3 Base Absolute maximum ratings (Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base

 0.25. Size:191K  inchange semiconductor
 2sc1505.pdf

isc Silicon NPN Power Transistor 2SC1505 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 50mA CE(sat) C Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color TV chroma output Circuits and sound output circui

 0.26. Size:187K  inchange semiconductor
 2sc1507.pdf

INCHANGE Semiconductor isc Silicon NPN Power Transistor 2SC1507 DESCRIPTION Collector-Emitter Breakdown Voltage- V = 300V(Min) (BR)CEO Low Collector-Emitter Saturation Voltage- V = 2.0V(Max) @I = 50mA CE(sat) C 100% avalanche tested Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS Designed for use in line-operated color T

 0.27. Size:191K  inchange semiconductor
 2sc1507-to220f.pdf

SavantIC Semiconductor Product Specification Silicon NPN Power Transistors 2SC1507 DESCRIPTION With TO-220F package High collector-emitter voltage VCEO=300V High frequency fT=40MHz(Min) APPLICATIONS For use in line-operated color TV chroma output circuits and sound output circuits. PINNING PIN DESCRIPTION 1 Base Collector;connected to 2 mounting base Fig.