C855 Todos los transistores

 0.1. Size:191K  fairchild semi
 fdmc8554.pdf

February 2007 FDMC8554 tm N-Channel Power Trench MOSFET 20V, 16.5A, 5m Features General Description Max rDS(on) = 5m at VGS = 10V, ID = 16.5A This N-Channel MOSFET is a rugged gate version of Fairchild Semiconductor s advanced Power Trench process. Max rDS(on) = 6.4m at VGS = 4.5V, ID = 14A It has been optimized for switching performance and ultra low Low Profile

 0.2. Size:279K  fairchild semi
 fdc855n.pdf

January 2008 FDC855N tm Single N-Channel, Logic Level, PowerTrench MOSFET 30V, 6.1A, 27m Features General Description Max rDS(on) = 27m at VGS = 10V, ID = 6.1A This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Max rDS(on) = 36m at VGS = 4.5V, ID = 5.3A Semiconductor s advanced PowerTrench

 0.3. Size:22K  utc
 utc8550s.pdf

UTC 8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTOR LOW VOLTAGE HIGH CURRENT SMALL SIGNAL PNP TRANSISTOR FEATURES *Collector current up to 800mA *Collector-Emitter voltage up to 20 V *Complimentary to 8050S APPLICATIONS *Class B push-pull audio amplifier *General purpose applications TO-92 1 EMITTER 2 COLLECTOR 3 BASE ABSOLUTE MAXIMUM RATINGS ( Ta=25 C ,unless otherwise specified )

 0.4. Size:360K  kec
 ktc8550.pdf

SEMICONDUCTOR KTC8550 TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8050. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO -35 V Collector-Base Voltage G 0.85 H 0.45 VCEO -30 V Collector-Emitter Voltage _ H J 14.0

 0.5. Size:360K  kec
 ktc8550a.pdf

SEMICONDUCTOR KTC8550A TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. B C FEATURE Complementary to KTC8050A. N DIM MILLIMETERS A 4.70 MAX E K B 4.80 MAX MAXIMUM RATING (Ta=25 ) G C 3.70 MAX D D 0.45 CHARACTERISTIC SYMBOL RATING UNIT E 1.00 F 1.27 VCBO Collector-Base Voltage -35 V G 0.85 H 0.45 VCEO Collector-Emitter Voltage -30 V _ H J 14

 0.6. Size:352K  kec
 ktc8550s.pdf

SEMICONDUCTOR KTC8550S TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTOR HIGH CURRENT APPLICATION. FEATURE E L B L Complementary to KTC8050S. DIM MILLIMETERS _ + A 2.93 0.20 B 1.30+0.20/-0.15 C 1.30 MAX 2 3 D 0.40+0.15/-0.05 E 2.40+0.30/-0.20 1 MAXIMUM RATING (Ta=25 ) G 1.90 H 0.95 J 0.13+0.10/-0.05 CHARACTERISTIC SYMBOL RATING UNIT K 0.00 0.10 Q L 0.55 VCBO -35 V C

 0.7. Size:128K  shantou-huashan
 hc8550s.pdf

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC8550S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGS Ta=25 Tstg Storage Temperature -55 150 TO-92 Tj Juncttion Temperature 150 PC Collector Dissipation

 0.8. Size:142K  shantou-huashan
 hc8550.pdf

 0.9. Size:64K  dc components
 dc8550.pdf

DC COMPONENTS CO., LTD. DC8550 DISCRETE SEMICONDUCTORS R TECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTOR Description Designed for use in 2W output amplifier of portable radios in class B push-pull operation. TO-92 Pinning .190(4.83) 1 = Emitter .170(4.33) 2 = Base 2oTyp 3 = Collector .190(4.83) .170(4.33) 2oTyp Absolute Maximum Ratings(TA=25oC) .500 Characterist