C855 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

February 2007FDMC8554tmN-Channel Power Trench MOSFET 20V, 16.5A, 5mFeatures General Description Max rDS(on) = 5m at VGS = 10V, ID = 16.5AThis N-Channel MOSFET is a rugged gate version of Fairchild Semiconductors advanced Power Trench process. Max rDS(on) = 6.4m at VGS = 4.5V, ID = 14AIt has been optimized for switching performance and ultra low Low Profile

January 2008FDC855NtmSingle N-Channel, Logic Level, PowerTrench MOSFET 30V, 6.1A, 27mFeatures General Description Max rDS(on) = 27m at VGS = 10V, ID = 6.1A This N-Channel Logic Level MOSFET is an efficient solution for low voltage and battery powered applications. Utilizing Fairchild Max rDS(on) = 36m at VGS = 4.5V, ID = 5.3ASemiconductors advanced PowerTrench

UTC 8 5 5 0 S PNP EPITAXIAL SILICON TRANSISTORLOW VOLTAGE HIGH CURRENTSMALL SIGNAL PNPTRANSISTORFEATURES*Collector current up to 800mA*Collector-Emitter voltage up to 20 V*Complimentary to 8050SAPPLICATIONS*Class B push-pull audio amplifier*General purpose applicationsTO-921:EMITTER 2: COLLECTOR 3: BASEABSOLUTE MAXIMUM RATINGS ( Ta=25C ,unless otherwise specified )

SEMICONDUCTOR KTC8550TECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to KTC8050.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBO -35 VCollector-Base VoltageG 0.85H 0.45VCEO -30 VCollector-Emitter Voltage_HJ 14.0

SEMICONDUCTOR KTC8550ATECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. B CFEATUREComplementary to KTC8050A.N DIM MILLIMETERSA 4.70 MAXEKB 4.80 MAXMAXIMUM RATING (Ta=25) GC 3.70 MAXDD 0.45CHARACTERISTIC SYMBOL RATING UNITE 1.00F 1.27VCBOCollector-Base Voltage -35 VG 0.85H 0.45VCEOCollector-Emitter Voltage -30 V_HJ 14

SEMICONDUCTOR KTC8550STECHNICAL DATA EPITAXIAL PLANAR PNP TRANSISTORHIGH CURRENT APPLICATION. FEATUREEL B LComplementary to KTC8050S.DIM MILLIMETERS_+A 2.93 0.20B 1.30+0.20/-0.15C 1.30 MAX23 D 0.40+0.15/-0.05E 2.40+0.30/-0.201MAXIMUM RATING (Ta=25) G 1.90H 0.95J 0.13+0.10/-0.05CHARACTERISTIC SYMBOL RATING UNITK 0.00 ~ 0.10QL 0.55VCBO -35 VC

PNP S I L I C O N T R A N S I S T O R Shantou Huashan Electronic Devices Co.,Ltd. HC8550S APPLICATIONS Audio Frequency Amplifier. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJuncttion Temperature150PCCollector Dissipation

Shantou Huashan Electronic Devices Co.,Ltd. HC8550 PNP EPITAXIAL SILICON TRANSISTOR 2W OUTPUT AMPLIFIER PORTABLE RADIO IN CLASS B PUSH-PULL OPERATION. ABSOLUTE MAXIMUM RATINGSTa=25 TstgStorage Temperature -55~150 TO-92 TjJunction Temperature150PCCollector Dissipation

DC COMPONENTS CO., LTD.DC8550DISCRETE SEMICONDUCTORSRTECHNICAL SPECIFICATIONS OF PNP EPITAXIAL PLANAR TRANSISTORDescriptionDesigned for use in 2W output amplifier of portableradios in class B push-pull operation.TO-92Pinning.190(4.83)1 = Emitter.170(4.33)2 = Base2oTyp3 = Collector.190(4.83).170(4.33)2oTypAbsolute Maximum Ratings(TA=25oC).500Characterist