CMPT5087 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: CMPT5087

Código: C2Q

Material: Si

Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.35 W

Tensión colector-base (Vcb): 50 V

Tensión colector-emisor (Vce): 50 V

Tensión emisor-base (Veb): 3 V

Corriente del colector DC máxima (Ic): 0.01 A

Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

Producto de corriente -- ganancia — ancho de banda (ft): 40 MHz

Capacitancia de salida (Cc): 4 pF

Ganancia de corriente contínua (hfe): 150

Empaquetado / Estuche: SOT23

Búsqueda de reemplazo de transistor bipolar CMPT5087

CMPT5087 Datasheet (PDF)

1.1. cmpt5087e cmpt5088e series.pdf Size:329K _central

CMPT5087E PNP CMPT5088E NPN www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION: COMPLEMENTARY The CENTRAL SEMICONDUCTOR CMPT5087E SILICON TRANSISTORS and CMPT5088E, are Silicon transistors in an epoxy molded surface mount package with enhanced specifications designed for applications requiring high gain and low noise. MARKING CODES: CMPT5087E: C2QE CMPT5088

1.2. cmpt5086 cmpt5087.pdf Size:324K _central

CMPT5086 CMPT5087 www.centralsemi.com SURFACE MOUNT DESCRIPTION: PNP SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT5086 and CMPT5087 are PNP silicon transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for applications requiring high gain and low noise. MARKING CODES: CMPT5086: C2P CMPT5087: C2Q SOT-23 CASE MAXIMUM RAT

1.3. cmpt5087e.pdf Size:329K _central