CMPT930 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMPT930
Código: C1X
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 30 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hfe): 100
Paquete / Cubierta: SOT23
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CMPT930 Datasheet (PDF)
cmpt918.pdf

CMPT918www.centralsemi.comSURFACE MOUNTNPN SILICON DESCRIPTION:RF TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency (VHF/UHF) amplifier and oscillator applications. MARKING CODE: C3BSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMB
cmpt992p.pdf

CMPT992CMPT992PCMPT992Fwww.centralsemi.comCMPT992EDESCRIPTION:SURFACE MOUNT PNP LOW NOISEThe CENTRAL SEMICONDUCTOR CMPT992 types SILICON TRANSISTORare PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE: SEE MAR
cmpt992.pdf

CMPT992CMPT992PCMPT992Fwww.centralsemi.comCMPT992EDESCRIPTION:SURFACE MOUNT PNP LOW NOISEThe CENTRAL SEMICONDUCTOR CMPT992 types SILICON TRANSISTORare PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE: SEE MAR
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
History: HUN5213 | S8550E



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