CMPT930 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: CMPT930
   Código: C1X
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 0.35 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 45 V
   Tensión emisor-base (Veb): 5 V
   Corriente del colector DC máxima (Ic): 0.01 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 30 MHz
   Capacitancia de salida (Cc): 8 pF
   Ganancia de corriente contínua (hfe): 100
   Paquete / Cubierta: SOT23

Búsqueda de reemplazo de transistor bipolar CMPT930

CMPT930 Datasheet (PDF)

9.1. Size:323K central
cmpt918.pdf

CMPT918www.centralsemi.comSURFACE MOUNTNPN SILICON DESCRIPTION:RF TRANSISTORThe CENTRAL SEMICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency (VHF/UHF) amplifier and oscillator applications. MARKING CODE: C3BSOT-23 CASEMAXIMUM RATINGS: (TA=25C) SYMB

9.2. Size:323K central
cmpt992p.pdf

CMPT992CMPT992PCMPT992Fwww.centralsemi.comCMPT992EDESCRIPTION:SURFACE MOUNT PNP LOW NOISEThe CENTRAL SEMICONDUCTOR CMPT992 types SILICON TRANSISTORare PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE: SEE MAR

9.3. Size:323K central
cmpt992.pdf