CMPT930 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CMPT930
Código: C1X
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.35 W
Tensión colector-base (Vcb): 45 V
Tensión colector-emisor (Vce): 45 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.01 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 30 MHz
Capacitancia de salida (Cc): 8 pF
Ganancia de corriente contínua (hFE): 100
Encapsulados: SOT23
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CMPT930 datasheet
cmpt918.pdf
CMPT918 www.centralsemi.com SURFACE MOUNT NPN SILICON DESCRIPTION RF TRANSISTOR The CENTRAL SEMICONDUCTOR CMPT918 type is an NPN silicon RF transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high frequency (VHF/UHF) amplifier and oscillator applications. MARKING CODE C3B SOT-23 CASE MAXIMUM RATINGS (TA=25 C) SYMB
cmpt992p.pdf
CMPT992 CMPT992P CMPT992F www.centralsemi.com CMPT992E DESCRIPTION SURFACE MOUNT PNP LOW NOISE The CENTRAL SEMICONDUCTOR CMPT992 types SILICON TRANSISTOR are PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE SEE MAR
cmpt992.pdf
CMPT992 CMPT992P CMPT992F www.centralsemi.com CMPT992E DESCRIPTION SURFACE MOUNT PNP LOW NOISE The CENTRAL SEMICONDUCTOR CMPT992 types SILICON TRANSISTOR are PNP silicon low noise transistors manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for low noise amplifier applications where a high BVCEO is required. MARKING CODE SEE MAR
Otros transistores... CMPT6427 , CMPT6428 , CMPT6429 , CMPT6517 , CMPT6520 , CMPT8099 , CMPT8599 , CMPT918 , 13005 , CMPTA06 , CMPTA13 , CMPTA14 , CMPTA27 , CMPTA29 , CMPTA42 , CMPTA44 , CMPTA56 .
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