CS1508E Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: CS1508E
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.3 W
Tensión colector-base (Vcb): 30 V
Tensión colector-emisor (Vce): 20 V
Tensión emisor-base (Veb): 5 V
Corriente del colector DC máxima (Ic): 0.03 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 100 MHz
Capacitancia de salida (Cc): 1 pF
Ganancia de corriente contínua (hFE): 30
Búsqueda de reemplazo de CS1508E
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CS1508E datasheet
9.2. Size:1071K blue-rocket-elect
brcs150n12sra.pdf 
BRCS150N12SRA Rev.A Feb.-2022 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These d
9.3. Size:1720K blue-rocket-elect
brcs150n10sbd.pdf
BRCS150N10SBD Rev.A Jun.-2023 DATA SHEET / Descriptions TO-263 N N-CHANNEL MOSFET in a TO-263 Plastic Package. / Features V =100V ; I =46A DS D R DSON@10V 15m (Type.14.8m ) R DSON@4.5V 25m (Type.20.4m ) HF Product. / Applications PFC
9.4. Size:1213K blue-rocket-elect
brcs150n10sra.pdf
BRCS150N10SRA Rev.A Nov.-2021 DATA SHEET / Descriptions TO-220 N N-CHANNEL MOSFET in a TO-220 Plastic Package. / Features , Ultra Low On-Resistance,fast switching. / Applications PFC These d
9.5. Size:2733K blue-rocket-elect
brcs150c02ya.pdf
BRCS150C02YA Rev.A Feb.-2023 DATA SHEET / Descriptions PDFN3 3-8L Complementary Enhancement MOSFET in a PDFN3 3-8L Plastic Package. / Features N-channel P-channel VDS(V)=20V VDS(V)=-20V ID=28A ID=-25A RDS(ON)
9.6. Size:1521K blue-rocket-elect
brcs150p02mc.pdf
BRCS150P02MC Rev.B Mar.-2023 DATA SHEET / Descriptions SOT23-3 P MOS P- CHANNEL MOSFET in a SOT23-3 Plastic Package. / Features V (V) = -20V DS I = -7.0A D R DS(ON)@-4.5V 17m (Type.15m ) HF Product. / Applications Power Management in
9.7. Size:1040K blue-rocket-elect
brcs150n10sdp.pdf
BRCS150N10SDP Rev.A Feb.-2022 DATA SHEET / Descriptions TO-252 N N-CHANNEL MOSFET in a TO-252 Plastic Package. / Features R C DS(on) rss Low RDS(on),low gate charge, low Crss, fast switching, HF Product. / Applications DC/
9.9. Size:1031K blue-rocket-elect
brcs150n10szc.pdf
BRCS150N10SZC Rev.A Oct.-2021 DATA SHEET / Descriptions PDFN5*6 N N-Channel MOSFET in a PDFN5*6 Plastic Package . / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance. H
9.10. Size:3156K blue-rocket-elect
brcs150c016yn.pdf
BRCS150C016YN Rev.A Jul.-2023 DATA SHEET / Descriptions DFN2 2C-6L Complementary Enhancement MOSFET in a DFN2 2C-6L Plastic Package. / Features N-channel P-channel V =16V V =-16V DS(V) DS(V) I =8.4A I =-6.3A D D R DS(ON)@-4.5V 25m (Typ.21mR) DS(ON)@4.5V 15m (Typ.13mR) R R DS(ON)@-2.5V 35m (Typ.28mR)
9.11. Size:1183K blue-rocket-elect
brcs150n12szc.pdf
BRCS150N12SZC Rev.A Jun.-2022 DATA SHEET / Descriptions PDFN5 6 N N-Channel MOSFET in a PDFN5 6 Plastic Package. / Features Low RDS(ON) to minimize conductive loss;low Gate Charge for fast switching;Low Thermal resistance;H
9.13. Size:169K crhj
cs150n04 a8.pdf
Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc
9.14. Size:390K crhj
cs150n03 a8.pdf
Silicon N-Channel Power MOSFET R CS150N03 A8 General Description VDSS 30 V CS150N03 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power sw
9.16. Size:392K wuxi china
cs150n03a8.pdf
Huajing Discrete Devices R Silicon N-Channel Power MOSFET CS150N03A8 General Description VDSS 30 V CS150N03A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 2.8 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can b
9.17. Size:200K wuxi china
cs150n04a8.pdf
Silicon N-Channel Power MOSFET R CS150N04 A8 General Description VDSS 40 V CS150N04 A8, the silicon N-channel Enhanced ID 150 A PD (TC=25 ) 100 W VDMOSFETs, is obtained by advanced trench Technology RDS(ON)Typ 4 m which reduce the conduction loss, improve switching performance and enhance the avalanche energy. The transistor can be used in various power switc
Otros transistores... CS1251F, CS1303, CS1312F, CS1312G, CS1312H, CS1312I, CS1506F, CS1506G, 2N4401, CS1508F, CS1508G, CS1509E, CS1509F, CS1613, CS1659, CS1660, CS1702
