2N3418 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

   Número de Parte: 2N3418
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

   Disipación total del dispositivo (Pc): 1 W
   Tensión colector-base (Vcb): 85 V
   Tensión colector-emisor (Vce): 60 V
   Tensión emisor-base (Veb): 8 V
   Corriente del colector DC máxima (Ic): 3 A
   Temperatura operativa máxima (Tj): 200 °C

CARACTERÍSTICAS ELÉCTRICAS

   Transición de frecuencia (ft): 40 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO5

Búsqueda de reemplazo de transistor bipolar 2N3418

2N3418 Datasheet (PDF)

..1. Size:63K microsemi
2n3418.pdf

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3418APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching3 Amp, 85V,FEATURES:NPN Silicon Power Meets MIL-S-19500/393Transistors Collector-Base Voltage: up to 85VJAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Di

..2. Size:167K aeroflex
2n3418 2n3419 2n3420 2n3421.pdf

NPN Meduim Power Silicon Transistor2N3418, 2N3419, 2N3420 & 2N34212N3418S, 2N3419S, 2N3420S & 2N3421SFeatures Available in commercial, JAN, JANTX, JANTXV, JANSand JANSR 100K rads (Si) per MIL-PRF-19500/393 TO-5, TO-39 (TO-205AD) PackageMaximum Ratings 2N3418, S 2N3419, SRatings Symbol 2N3420, S 2N3421, S UnitsCollector - Emitter Voltage VCEO 60 80 VdcCollector - Base

9.1. Size:304K fairchild semi
2n3416 2n3417.pdf

2N34162N3417B TO-92CENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 10. See PN100A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsVCEO Collector-Emitter Voltage 50 VVCBO Collector-Base Voltage 50 V

9.2. Size:33K fairchild semi
2n3415.pdf

2N3415B TO-92CENPN General Purpose AmplifierThis device is designed for use as general purpose amplifiersand switches requiring collector currents to 300 mA. Sourcedfrom Process 10. See PN100A for characteristics.Absolute Maximum Ratings* TA = 25C unless otherwise notedSymbol Parameter Value UnitsV Collector-Emitter Voltage 25 VCEOV Collector-Base Voltage 25 VCBOV

9.3. Size:58K central
2n3414 2n3415 2n3416 2n3417 mps3414 mps3415 mps3416 mps3417.pdf

145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824

9.4. Size:48K microelectronics
2n3414.pdf

9.5. Size:63K microsemi
2n3419.pdf

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3419APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching3 Amp, 125V,FEATURES:NPN Silicon Power Meets MIL-S-19500/393Transistors Collector-Base Voltage: up to 125VJAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power

9.6. Size:1285K sprague
2n3403 2n3404 2n3405 2n3414 2n3415 2n3416 2n3417 2n3702 2n3703 2n3704 2n3705 2n3706 2n3707 2n3708 2n3709 2n3710.pdf