CXT5551 Datasheet. Equivalente

 ..1. Size:1577K  jiangsu
 cxt5551.pdf

JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD SOT-89-3L Plastic-Encapsulate Transistors SOT-89-3L CXT5551 TRANSISTOR (NPN) FEATURES 1 Switching and amplification in high voltage 1. BASE Applications such as telephony 2. COLLECTOR Low current(max. 600mA) 3. EMITTER High voltage(max.180V) Marking 1G6 MAXIMUM RATINGS (Ta=25 unless otherwise noted) S

 ..2. Size:731K  htsemi
 cxt5551.pdf

CXT5551 TRANSISTOR (NPN) SOT-89 FEATURES Switching and amplification in high voltage 1 Applications such as telephony 1. BASE Low current(max. 600mA) 2. COLLECTOR High voltage(max.180v) 3. EMITTER Marking 1G6 MAXIMUM RATINGS (TA=25 unless otherwise noted) Symbol Parameter Value Units VCBO Collector-Base Voltage 180 V VCEO Collector-Emitter Voltage 160 V

 ..3. Size:248K  lge
 cxt5551.pdf

CXT5551 SOT-89 Transistor(NPN) 1. BASE 2. COLLECTOR 1 3. EMITTER SOT-89 4.6 B 4.4 1.6 1.8 1.4 1.4 Features 2.6 4.25 Switching and amplification in high voltage 2.4 3.75 Applications such as telephony 0.8 MIN Low current(max. 600mA) 0.53 0.40 0.48 0.44 2x) 0.13 B 0.35 High voltage(max.180v) 0.37 1.5 3.0 Marking 1G6 Dimensions in inches and (mil

 ..4. Size:1000K  kexin
 cxt5551.pdf

SMD Type Transistors NPN Transistors CXT5551 (KXT5551) Features 1.70 0.1 High current (max. 600mA). Low voltage (max. 160 V). Comlementary to CXT5401 0.42 0.1 0.46 0.1 1.Base 2.Collector 3.Emitter Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector - Base Voltage VCBO 180 Collector - Emitter Voltage VCEO 160 V Emitter - Base Voltage VEBO 6 Collector

 ..5. Size:708K  slkor
 cxt5551.pdf

CXT5551 Plastic-Encapsulate Transistors Features C Switching and amplification in high voltage Applications such as telephony Low current(max. 600mA) High voltage(max.180V) E C B SOT-89-3L top view Schematic diagram Application C High voltage amplifier application 1G6 C E B Marking and pin assignment Maximum Ratings(Ta=25 unless otherwise noted) Symbol Pa

 ..6. Size:998K  cn shunye
 cxt5551.pdf

CXT5551 NPN Silicon General Purpose Transistors Features SOT-89-3L NPN Silicon, planar design Collector-emitter voltage VCE = 160V Collector current IC = 600mA Lead free in compliance with EU RoHS 2.0 1.70 0.1 Mechanical data Epoxy UL94-V0 rated flame retardant Case Molded plastic, SOT-89-3L Terminals Solder plated, solderable per 0.42 0.1 0.46 0.

 0.1. Size:290K  central
 cxt5551e.pdf

CXT5551E www.centralsemi.com ENHANCED SPECIFICATION SURFACE MOUNT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT5551E is an NPN Silicon Transistor, packaged in an SOT-89 case, designed for general purpose amplifier applications requiring high breakdown voltage. MARKING FULL PART NUMBER FEATURES High Collector Breakdown Voltage 250V SOT-89 CASE Low

 0.2. Size:283K  central
 cxt5551hc.pdf

CXT5551HC www.centralsemi.com SURFACE MOUNT HIGH CURRENT DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR CXT5551HC type is an high current NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high voltage and high current amplifier applications. MARKING FULL PART NUMBER SOT-89 CASE MAXIMUM RAT