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CZT3055 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: CZT3055
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 2 W
   Tensión colector-base (Vcb): 100 V
   Tensión colector-emisor (Vce): 70 V
   Corriente del colector DC máxima (Ic): 6 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 2.5 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: SOT223
 

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CZT3055 Datasheet (PDF)

 ..1. Size:598K  central
czt2955 czt3055.pdf pdf_icon

CZT3055

CZT2955 PNPCZT3055 NPNwww.centralsemi.comSURFACE MOUNTDESCRIPTION:COMPLEMENTARYThe CENTRAL SEMICONDUCTOR CZT2955 and SILICON POWER TRANSISTORSCZT3055 types are surface mount epoxy molded complementary silicon transistors manufactured by the epitaxial base process, designed for surface mounted power amplifier applications up to 6.0 amps.MARKING: FULL PART NUMBERSOT-223

 ..2. Size:312K  kexin
czt3055.pdf pdf_icon

CZT3055

SMD Type TransistorsNPN TransistorsCZT3055 (KZT3055)Unit:mmSOT-2236.500.23.000.1 Features4 High Current Low Voltage Surface Mounted Power Amplifier Application1 2 3 Complement to CZT29550.2502.30 (typ)Gauge Plane1.Base 2.Collector0.700.13.Emitter4.60 (typ) 4.Collector Absolute Maximum Ratings Ta = 25Parameter Symbol

 9.1. Size:536K  central
czt3090le.pdf pdf_icon

CZT3055

CZT3090LEENHANCED SPECIFICATIONwww.centralsemi.comSURFACE MOUNTDESCRIPTION:LOW VCE(SAT) NPNThe CENTRAL SEMICONDUCTOR CZT3090LE is an SILICON POWER TRANSISTOREnhanced Specification Low VCE(SAT) NPN SiliconPower Transistor packaged in an industry standard SOT-223 case. High Collector Current, coupled with aLow Saturation Voltage, make this an excellent choicefor industrial

 9.2. Size:529K  central
czt3019.pdf pdf_icon

CZT3055

CZT3019www.centralsemi.comSURFACE MOUNTDESCRIPTION:NPN SILICON TRANSISTORThe CENTRAL SEMICONDUCTOR CZT3019 type is an NPN silicon transistor manufactured by the epitaxial planar process, epoxy molded in a surface mount package, designed for high current general purpose amplifier applications.MARKING: FULL PART NUMBERSOT-223 CASESOT-223 CASEMAXIMUM RATINGS: (TA=25C) S

Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SC4793 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .

History: BR3197 | BCY99B

 

 
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