2N3427 Todos los transistores

 

2N3427 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: 2N3427
   Material: Ge
   Polaridad de transistor: PNP

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 0.2 W
   Tensión colector-base (Vcb): 45 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 30 V
   Corriente del colector DC máxima (Ic): 0.5 A
   Temperatura operativa máxima (Tj): 100 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 4 MHz
   Capacitancia de salida (Cc): 20 pF
   Ganancia de corriente contínua (hfe): 75
   Paquete / Cubierta: TO5

 Búsqueda de reemplazo de transistor bipolar 2N3427

 

2N3427 Datasheet (PDF)

 9.1. Size:10K  semelab
2n3420smd05.pdf

2N3427

2N3420SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm

 9.2. Size:15K  semelab
2n3420l.pdf

2N3427

2N3420LDimensions in mm (inches). 8.51 (0.34)9.40 (0.37)Bipolar NPN Device in a 7.75 (0.305)8.51 (0.335)Hermetically sealed TO5 Metal Package. 6.10 (0.240)6.60 (0.260)0.89 (0.035)max.38.00 Bipolar NPN Device. (1.5)0.41 (0.016)min.0.53 (0.021)dia.VCEO = 60V 5.08 (0.200)IC = 5A typ.2.54All Semelab hermetically sealed products 2(0.100)1 3 can b

 9.3. Size:10K  semelab
2n3421smd05.pdf

2N3427

2N3421SMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 3A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab herm

 9.4. Size:10K  semelab
2n3420smd.pdf

2N3427

2N3420SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 60V IC = 4A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

 9.5. Size:10K  semelab
2n3421smd.pdf

2N3427

2N3421SMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 3A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (0

 9.6. Size:10K  semelab
2n3421asmd05.pdf

2N3427

2N3421ASMD05Dimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 7.54 (0.296)0.76 (0.030) Ceramic Surface Mount min.3.175 (0.125) 2.41 (0.095) Package for High 2.41 (0.095) Max. 0.127 (0.005)Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 0.127 (0.005)16 PLCS 0.127 (0.005) 0.50(0.020)0.50 (0.020)All Semelab her

 9.7. Size:10K  semelab
2n3421asmd.pdf

2N3427

2N3421ASMDDimensions in mm (inches). Bipolar NPN Device in a Hermetically sealed 0.89(0.035)min.Ceramic Surface Mount 3.70 (0.146) 3.70 (0.146) 3.60 (0.142)3.41 (0.134) 3.41 (0.134) Max.Package for High Reliability Applications 1 3Bipolar NPN Device. 2VCEO = 80V IC = 5A 9.67 (0.381)All Semelab hermetically sealed products 9.38 (0.369)0.50 (0.020)0.26 (

 9.8. Size:63K  microsemi
2n3420.pdf

2N3427
2N3427

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3420APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching3 Amp, 85V,FEATURES:NPN Silicon Power Meets MIL-S-19500/393Transistors Collector-Base Voltage: up to 85JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power Dis

 9.9. Size:63K  microsemi
2n3421.pdf

2N3427
2N3427

7516 Central Industrial DriveRiviera Beach, Florida33404PHONE: (561) 842-0305FAX: (561) 845-78132N3421APPLICATIONS: Power Supply Pulse Amplifier High Frequency Power Switching3 Amp, 125V,FEATURES:NPN Silicon Power Meets MIL-S-19500/393Transistors Collector-Base Voltage: up to 125JAN, JTX, JTXV, JANS Peak Collector Current: 5A High Power D

 9.10. Size:167K  aeroflex
2n3418 2n3419 2n3420 2n3421.pdf

2N3427
2N3427

NPN Meduim Power Silicon Transistor2N3418, 2N3419, 2N3420 & 2N34212N3418S, 2N3419S, 2N3420S & 2N3421SFeatures Available in commercial, JAN, JANTX, JANTXV, JANSand JANSR 100K rads (Si) per MIL-PRF-19500/393 TO-5, TO-39 (TO-205AD) PackageMaximum Ratings 2N3418, S 2N3419, SRatings Symbol 2N3420, S 2N3421, S UnitsCollector - Emitter Voltage VCEO 60 80 VdcCollector - Base

Otros transistores... 2N3421ASM , 2N3421LCC4 , 2N3421LP , 2N3421SM , 2N3423 , 2N3424 , 2N3425 , 2N3426 , 2SC6090LS , 2N3428 , 2N3429 , 2N342A , 2N342B , 2N343 , 2N3430 , 2N3431 , 2N3432 .

History: 2N3345 | 2N335B | MJE712

 

 
Back to Top

 


History: 2N3345 | 2N335B | MJE712

2N3427
  2N3427
  2N3427
 

social 

Liste

Recientemente añadidas las descripciónes de los transistores:

BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050

 

 

 
Back to Top