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D44VH1 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características


   Número de Parte: D44VH1
   Material: Si
   Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS


   Disipación total del dispositivo (Pc): 75 W
   Tensión colector-base (Vcb): 50 V
   Tensión colector-emisor (Vce): 30 V
   Tensión emisor-base (Veb): 7 V
   Corriente del colector DC máxima (Ic): 15 A
   Temperatura operativa máxima (Tj): 150 °C

CARACTERÍSTICAS ELÉCTRICAS


   Transición de frecuencia (ft): 25 MHz
   Ganancia de corriente contínua (hfe): 20
   Paquete / Cubierta: TO220
 

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D44VH1 Datasheet (PDF)

 0.1. Size:70K  onsemi
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D44VH1

D44VH10 (NPN),D45VH10 (PNP)Complementary SiliconPower TransistorsThese complementary silicon power transistors are designed forhigh-speed switching applications, such as switching regulators andhigh frequency inverters. The devices are also well-suited for driversfor high power switching circuits.15 AFeaturesCOMPLEMENTARY SILICON Fast Switching -POWER TRANSISTORS t

 0.2. Size:98K  onsemi
d44vh10 d45vh10.pdf pdf_icon

D44VH1

D44VH10 (NPN),D45VH10 (PNP)Complementary SiliconPower TransistorsThese complementary silicon power transistors are designed forhigh-speed switching applications, such as switching regulators andwww.onsemi.comhigh frequency inverters. The devices are also well-suited for driversfor high power switching circuits.15 ACOMPLEMENTARY SILICONFeaturesPOWER TRANSISTORS Fast

 0.3. Size:213K  inchange semiconductor
d44vh10.pdf pdf_icon

D44VH1

isc Silicon NPN Power Transistor D44VH10DESCRIPTIONDC Current Gain-: h = 35(Min)@I = 2AFE CCollector-Emitter Sustaining Voltage-: V = 80V(Min)CEO(SUS)Minimum Lot-to-Lot variations for robust deviceperformance and reliable operationAPPLICATIONSDesigned for use in general purpose power amplifier andswitching applications.ABSOLUTE MAXIMUM RATINGS (T =25)aSY

Otros transistores... D44TE4 , D44TE5 , D44U1 , D44U2 , D44U3 , D44U4 , D44U5 , D44U6 , TIP32C , D44VH10 , D44VH2 , D44VH3 , D44VH4 , D44VH5 , D44VH6 , D44VH7 , D44VH8 .

 

 
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