2N3493
. Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N3493
Material: Si
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.15
W
Tensión colector-base (Vcb): 12
V
Tensión colector-emisor (Vce): 8
V
Corriente del colector DC máxima (Ic): 0.025
A
Temperatura operativa máxima (Tj): 200
°C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 400
MHz
Capacitancia de salida (Cc): 0.7
pF
Ganancia de corriente contínua (hfe): 40
Paquete / Cubierta:
TO72
Búsqueda de reemplazo de transistor bipolar 2N3493
2N3493
Datasheet (PDF)
9.1. Size:190K cdil
2n3496 7.pdf
Continental Device India LimitedQAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyPNP SILICON PLANAR SWITCHING TRANSISTORS 2N34962N3497TO-18Metal Can PackageGeneral Purpose Transistors for Switching and Linear Applications. DC Amplilfier & Driver For Industrial ApplicationsABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL 2N3496 2N3497
9.2. Size:310K cdil
2n3498 99 2n3500 01.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501TO-39Metal Can PackageABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL TEST CONDITION 2N3498 2N3500 UNITS2N3499 2N3501VCEOCollector Emitter Voltage 100 150 VVCBOCollector Base Voltage 100
9.3. Size:69K microsemi
2n3498 2n3499 2n3450 2n3451.pdf
TECHNICAL DATA NPN SILICON TRANSISTOR Qualified per MIL-PRF-19500/366 Devices Qualified Level JAN 2N3498 2N3499 2N3500 2N3501 JANTX 2N3498L 2N3499L 2N3500L 2N3501L JANTXV JANS MAXIMUM RATINGS 2N3498* 2N3500* Ratings Symbol 2N3499* 2N3501* Unit Collector-Emitter Voltage 100 150 Vdc VCEO Collector-Base Voltage 100 150 Vdc VCBO Emitter-Base Voltage 6.0 6.0 Vdc VE
9.4. Size:106K microsemi
2n3498l.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS JANSM 3K Rads (Si) 2N3498 2N3499 2N3500 2N3501JANSD 10K Rads (Si) 2N3498L 2N3499L 2N3500L 2N3501LJANSP 30K Rads (Si)
9.5. Size:106K microsemi
2n3499l.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS JANSM 3K Rads (Si) 2N3498 2N3499 2N3500 2N3501JANSD 10K Rads (Si) 2N3498L 2N3499L 2N3500L 2N3501LJANSP 30K Rads (Si)
9.6. Size:47K semicoa
2n3497.pdf
Data Sheet No. 2N3498Generic Part Number:Type 2N34982N3498Geometry 5620Polarity NPNREF: MIL-PRF-19500/366Qual Level: JAN - JANTXVFeatures: General-purpose silicon transistorfor switching and amplifier appli-cations. Housed in TO-39 case. Also available in chip form usingthe 5620 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/366 whic
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