2N35 Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N35
Material: Ge
Polaridad de transistor: NPN
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.05 W
Tensión colector-base (Vcb): 40 V
Tensión colector-emisor (Vce): 25 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 85 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 0.4 MHz
Ganancia de corriente contínua (hFE): 25
Encapsulados: TO22
Búsqueda de reemplazo de 2N35
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2N35 datasheet
0.3. Size:45K philips
2n3553.pdf 
DISCRETE SEMICONDUCTORS DATA SHEET 2N3553 Silicon planar epitaxial overlay transistor 1995 Oct 27 Product specification Supersedes data of October 1981 File under Discrete Semiconductors, SC08a Philips Semiconductors Product specification Silicon planar epitaxial 2N3553 overlay transistor APPLICATIONS DESCRIPTION The 2N3553 is intended for use in VHF and UHF The device is a s
0.4. Size:427K fairchild semi
fdpf12n35.pdf
April 2007 TM UniFET FDP12N35 / FDPF12N35 350V N-Channel MOSFET Features Description 12A, 350V, RDS(on) = 0.38 @VGS = 10 V These N-Channel enhancement mode power field effect Low gate charge ( typical 18 nC) transistors are produced using Fairchild s proprietary, planar Low Crss ( typical 15 pF) stripe, DMOS technology. Fast switching This advanced technology h
0.8. Size:430K central
2n3583 2n3584 2n3585.pdf
2N3583 2N3584 www.centralsemi.com 2N3585 DESCRIPTION NPN SILICON TRANSISTOR The CENTRAL SEMICONDUCTOR 2N3583 Series types are NPN Silicon Transistors designed for high speed switching and high voltage amplifier applications. MARKING FULL PART NUMBER TO-66 CASE MAXIMUM RATINGS (TC=25 C) SYMBOL 2N3583 2N3584 2N3585 UNITS Collector-Base Voltage VCBO 250 375 500 V Collector-Emitt
0.9. Size:67K central
2n3500-2n3501.pdf
145 Adams Avenue, Hauppauge, NY 11788 USA Tel (631) 435-1110 Fax (631) 435-1824
0.10. Size:160K comset
2n3583-2n3584-2n3585.pdf
NPN 2N3583 2N3584 2N3585 NPN SILICON POWER TRANSISTORS. High voltage power transistors designed for industrial and military applications. TO-66 metal case. Compliance to RoHS. ABSOLUTE MAXIMUM RATINGS Symbol Ratings Value Unit 2N3583 250 VCBO Collector-Base Voltage (IE= 0) 2N3584 330 V 2N3585 440 2N3583 175 VCEO Collector-Emitter Voltage (IB= 0) 2N3584 250 V 2N3585 3
0.11. Size:11K semelab
2n3558.pdf
2N3558 Dimensions in mm (inches). Bipolar NPNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = dia. IC = 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can b
0.12. Size:11K semelab
2n3509csm.pdf
2N3509CSM Dimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31 rad. (0.012) Ceramic Surface Mount 3 Package for High Reliability Applications 21 1.91 0.10 (0.075 0.004) A 0.31 rad. Bipolar NPN Device. (0.012) 3.05 0.13 (0.12 0.005) 1.40 (0.055) 1.02 0.10 max. VCEO = 20V A = (0.04 0.004
0.13. Size:10K semelab
2n3509dcsm.pdf
2N3509DCSM Dimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.15 2.29 0.20 1.65 0.13 (0.055 0.006) (0.09 0.008) (0.065 0.005) Applications 2 3 1 4 Dual Bipolar NPN Devices. A 0.23 6 5 rad. (0.009) V = 20V CEO 6.22 0.13 A = 1.27 0.13 I = 0.5A C (0.0
0.14. Size:11K semelab
2n3537.pdf
2N3537 Dimensions in mm (inches). Bipolar NPNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = dia. IC = 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can b
0.15. Size:23K semelab
2n3502 2n3503 2n3504 2n3505.pdf
2N3502 2N3503 2N3504 2N3505 MECHANICAL DATA PNP SILICON PLANAR EPITAXIAL Dimensions in mm (inches) 5.84 (0.230) TRANSISTORS 5.31 (0.209) 4.95 (0.195) 4.52 (0.178) FEATURES 0.48 (0.019) 0.41 (0.016) SILICON PLANAR EPITAXIAL PNP dia. TRANSISTOR 2.54 (0.100) Nom. 3 1 2 TO18 METAL PACKAGE PIN 1 Emitter PIN 2 Base PIN 3 Collector
0.16. Size:10K semelab
2n3536.pdf
2N3536 Dimensions in mm (inches). Bipolar NPNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = dia. IC = 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can b
0.17. Size:10K semelab
2n3535.pdf
2N3535 Dimensions in mm (inches). Bipolar NPNP Device in a 8.51 (0.34) 9.40 (0.37) Hermetically sealed TO39 7.75 (0.305) 8.51 (0.335) Metal Package. 6.10 (0.240) 6.60 (0.260) Bipolar NPNP Device. 0.89 max. (0.035) 12.70 (0.500) min. 0.41 (0.016) 0.53 (0.021) VCEO = dia. IC = 5.08 (0.200) typ. 2.54 All Semelab hermetically sealed products 2 (0.100) 1 3 can b
0.18. Size:16K advanced-semi
2n3570.pdf
2N3570 NPN SILICON HIGH FREQUENCY TRANSISTOR DESCRIPTION The 2N3570 is Designed for High Frequency Low Noise Amplifier and Oscillator Applications. PACKAGE STYLE TO- 72 MAXIMUM RATINGS IC 50 mA VCB 30 V VCE 15 V VEB 3.0 V PDISS 200 mW @ TC = 25 OC TJ -65 OC to +200 OC TSTG -65 OC to +200 OC 1 = EMITTER 2 = BASE 3 = COLLECTOR 4 = CASE 500 OC/W JC NONE CHARACTER
0.20. Size:310K cdil
2n3498 99 2n3500 01.pdf
Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501 TO-39 Metal Can Package ABSOLUTE MAXIMUM RATINGS (Ta=25 C unless specified otherwise) DESCRIPTION SYMBOL TEST CONDITION 2N3498 2N3500 UNITS 2N3499 2N3501 VCEO Collector Emitter Voltage 100 150 V VCBO Collector Base Voltage 100
0.22. Size:90K microsemi
2n3506al.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507 JANTX 2N3506A 2N3507A JANTXV 2N3506L 2N3507L 2N3506AL 2N3507AL ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) P
0.23. Size:90K microsemi
2n3507a.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507 JANTX 2N3506A 2N3507A JANTXV 2N3506L 2N3507L 2N3506AL 2N3507AL ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) P
0.24. Size:106K microsemi
2n3501ub.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS JANSM 3K Rads (Si) 2N3498 2N3499 2N3500 2N3501 JANSD 10K Rads (Si) 2N3498L 2N3499L 2N3500L 2N3501L JANSP 30K Rads (Si)
0.25. Size:90K microsemi
2n3507al.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507 JANTX 2N3506A 2N3507A JANTXV 2N3506L 2N3507L 2N3506AL 2N3507AL ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) P
0.26. Size:90K microsemi
2n3506a.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507 JANTX 2N3506A 2N3507A JANTXV 2N3506L 2N3507L 2N3506AL 2N3507AL ABSOLUTE MAXIMUM RATINGS (TC = +25 C unless otherwise noted) P
0.27. Size:106K microsemi
2n3500l.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax (978) 689-0803 Website http //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS JANSM 3K Rads (Si) 2N3498 2N3499 2N3500 2N3501 JANSD 10K Rads (Si) 2N3498L 2N3499L 2N3500L 2N3501L JANSP 30K Rads (Si)
0.28. Size:45K semicoa
2n3506.pdf
Data Sheet No. 2N3506 Generic Part Number Type 2N3506 2N3506 Geometry 1506 Polarity NPN REF MIL-PRF-19500/349 Qual Level JAN - JANTXV Features General-purpose silicon transistor for switching and amplifier appli- cations. Housed in TO-39 case. Also available in chip form using the 1506 chip geometry. The Min and Max limits shown are per MIL-PRF-19500/349 whic
0.29. Size:46K semicoa
2n3507.pdf
Data Sheet No. 2N3507 Generic Part Number Type 2N3507 2N3507 Geometry 1506 Polarity NPN REF MIL-PRF-19500/349 Qual Level JAN - JANTXV Features General-purpose silicon transistor for switching and amplifier appli- cations. Housed in TO-39 case. Also available in chip form using the 1506 chip geometry. The Min and Max limits shown are TO-39 per MIL-PRF-19500/3
0.30. Size:130K inchange semiconductor
2n3584.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3584 DESCRIPTION With TO-66 package Continuous collector current-IC=2A Power dissipation -PD=35W @TC=25 VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS High speed switching and linear amplification High-voltage operational amplifiers Switching regulators ,converters Deflection
0.31. Size:181K inchange semiconductor
2n3583.pdf
INCHANGE Semiconductor isc Product Specification isc Silicon NPN Power Transistor 2N3583 DESCRIPTION Contunuous Collector Current-IC= 1A Power Dissipation-PD=35W @TC= 25 Collector-Emitter Saturation Voltage- VCE(sat)= 5.0 V(Max)@ IC = 1A APPLICATIONS Designed for high-speed switching and linear amplifier appli- cation for high-voltage operational amplifiers, switch
0.32. Size:153K inchange semiconductor
2n3585.pdf
Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N3585 DESCRIPTION With TO-66 package Continuous collector current-IC=2A Power dissipation -PD=35W @TC=25 VCE(SAT)=0.75V(Max)@IC=1A;IB=0.125A APPLICATIONS High speed switching and linear amplification High-voltage operational amplifiers Switching regulators ,converters Deflection
Otros transistores... 2N3496
, 2N3497
, 2N3498
, 2N3498S
, 2N3499
, 2N3499S
, 2N349A
, 2N34A
, BC639
, 2N350
, 2N3500
, 2N3500S
, 2N3501
, 2N3501CSM4
, 2N3501DCSM
, 2N3501L
, 2N3501S
.
