2N350 . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: 2N350
Material: Ge
Polaridad de transistor: PNP
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 10 W
Tensión colector-base (Vcb): 50 V
Tensión colector-emisor (Vce): 40 V
Corriente del colector DC máxima (Ic): 3 A
Temperatura operativa máxima (Tj): 90 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 0.3 MHz
Ganancia de corriente contínua (hfe): 20
Paquete / Cubierta: TO3
Búsqueda de reemplazo de transistor bipolar 2N350
2N350 Datasheet (PDF)
2n3500-2n3501.pdf
145 Adams Avenue, Hauppauge, NY 11788 USATel: (631) 435-1110 Fax: (631) 435-1824
2n3509csm.pdf
2N3509CSMDimensions in mm (inches). Bipolar NPN Device in a 0.51 0.10 Hermetically sealed LCC1 (0.02 0.004) 0.31rad.(0.012) Ceramic Surface Mount 3Package for High Reliability Applications 211.91 0.10(0.075 0.004)A0.31rad.Bipolar NPN Device. (0.012)3.05 0.13(0.12 0.005)1.40(0.055)1.02 0.10max.VCEO = 20V A =(0.04 0.004
2n3509dcsm.pdf
2N3509DCSMDimensions in mm (inches). Dual Bipolar NPN Devices in a hermetically sealed LCC2 Ceramic Surface Mount Package for High Reliability 1.40 0.152.29 0.20 1.65 0.13(0.055 0.006)(0.09 0.008) (0.065 0.005)Applications 2 314Dual Bipolar NPN Devices. A0.236 5rad. (0.009) V = 20V CEO6.22 0.13 A = 1.27 0.13I = 0.5A C(0.0
2n3502 2n3503 2n3504 2n3505.pdf
2N35022N35032N35042N3505MECHANICAL DATAPNP SILICON PLANAR EPITAXIALDimensions in mm (inches)5.84 (0.230)TRANSISTORS5.31 (0.209)4.95 (0.195)4.52 (0.178)FEATURES0.48 (0.019)0.41 (0.016) SILICON PLANAR EPITAXIAL PNPdia.TRANSISTOR2.54 (0.100)Nom.3 12TO18 METAL PACKAGEPIN 1 Emitter PIN 2 Base PIN 3 Collector
2n3498 99 2n3500 01.pdf
Continental Device India LimitedAn ISO/TS 16949, ISO 9001 and ISO 14001 Certified CompanyNPN SILICON PLANAR RF TRANSISTORS 2N3498, 2N3499, 2N3500, 2N3501TO-39Metal Can PackageABSOLUTE MAXIMUM RATINGS (Ta=25C unless specified otherwise)DESCRIPTION SYMBOL TEST CONDITION 2N3498 2N3500 UNITS2N3499 2N3501VCEOCollector Emitter Voltage 100 150 VVCBOCollector Base Voltage 100
2n3506al.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507JANTX 2N3506A 2N3507AJANTXV 2N3506L 2N3507L2N3506AL 2N3507ALABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) P
2n3507a.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507JANTX 2N3506A 2N3507AJANTXV 2N3506L 2N3507L2N3506AL 2N3507ALABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) P
2n3501ub.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS JANSM 3K Rads (Si) 2N3498 2N3499 2N3500 2N3501JANSD 10K Rads (Si) 2N3498L 2N3499L 2N3500L 2N3501LJANSP 30K Rads (Si)
2n3507al.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507JANTX 2N3506A 2N3507AJANTXV 2N3506L 2N3507L2N3506AL 2N3507ALABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) P
2n3506a.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com NPN MEDIUM POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/349 DEVICES LEVELS JAN 2N3506 2N3507JANTX 2N3506A 2N3507AJANTXV 2N3506L 2N3507L2N3506AL 2N3507ALABSOLUTE MAXIMUM RATINGS (TC = +25C unless otherwise noted) P
2n3500l.pdf
TECHNICAL DATA SHEET 6 Lake Street, Lawrence, MA 01841 1-800-446-1158 / (978) 620-2600 / Fax: (978) 689-0803 Website: http: //www.microsemi.com RADIATION HARDENED NPN SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/366 DEVICES LEVELS JANSM 3K Rads (Si) 2N3498 2N3499 2N3500 2N3501JANSD 10K Rads (Si) 2N3498L 2N3499L 2N3500L 2N3501LJANSP 30K Rads (Si)
2n3506.pdf
Data Sheet No. 2N3506Generic Part Number:Type 2N35062N3506Geometry 1506Polarity NPNREF: MIL-PRF-19500/349Qual Level: JAN - JANTXVFeatures: General-purpose silicon transistorfor switching and amplifier appli-cations. Housed in TO-39 case. Also available in chip form usingthe 1506 chip geometry. The Min and Max limits shown areper MIL-PRF-19500/349 whic
2n3507.pdf
Data Sheet No. 2N3507Generic Part Number:Type 2N35072N3507Geometry 1506Polarity NPNREF: MIL-PRF-19500/349Qual Level: JAN - JANTXVFeatures: General-purpose silicon transistorfor switching and amplifier appli-cations. Housed in TO-39 case. Also available in chip form usingthe 1506 chip geometry. The Min and Max limits shown areTO-39per MIL-PRF-19500/3
Otros transistores... 2N3192 , 2N3193 , 2N3194 , 2N3195 , 2N3196 , 2N3197 , 2N3198 , 2N3199 , 2SA1837 , 2N320 , 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 .
Liste
Recientemente añadidas las descripciónes de los transistores:
BJT: SBT42 | 2SA200-Y | 2SA200-O | 2SD882-Q | 2SD882-P | 2SD882-E | 2SC945-L | 2SC945-H | 2SC4226-R23 | 2SC3357-F | 2SC3357-E | 2SC3356-R26 | 2SC3356-R24 | 2SC3356-R23 | 2SB772-Q | 2SB772-P | 2SB772-E | 2SA1015-L | 2SA1015-H | HSS8550 | HSS8050