DT1602 Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características

Número de Parte: DT1602

Material: Si

Polaridad de transistor: NPN

ESPECIFICACIONES MÁXIMAS

Disipación total del dispositivo (Pc): 0.1 W

Tensión colector-base (Vcb): 75 V

Tensión colector-emisor (Vce): 75 V

Corriente del colector DC máxima (Ic): 0.02 A

Temperatura operativa máxima (Tj): 125 °C

CARACTERÍSTICAS ELÉCTRICAS

Ganancia de corriente contínua (hFE): 5

Encapsulados: TO5

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DT1602 datasheet

 9.1. Size:743K  fairchild semi
 fdt1600n10alz.pdf pdf_icon

DT1602

November 2013 FDT1600N10ALZ N-Channel PowerTrench MOSFET 100 V, 5.6 A, 160 m Features Description RDS(on) = 121 m (Typ.) @ VGS = 10 V, ID = 2.8 A This N-Channel MOSFET is produced using Fairchld Semicon- ductor s advanced PowerTrench process that has been tai- RDS(on) = 156 m (Typ.) @ VGS = 5 V, ID = 1.8 A lored to minimize the on-state resistance and maintain superi

 9.2. Size:850K  onsemi
 fdt1600n10alz.pdf pdf_icon

DT1602

Is Now Part of To learn more about ON Semiconductor, please visit our website at www.onsemi.com Please note As part of the Fairchild Semiconductor integration, some of the Fairchild orderable part numbers will need to change in order to meet ON Semiconductor s system requirements. Since the ON Semiconductor product management systems do not have the ability to manage part nomenclatur

 9.3. Size:1411K  cn vbsemi
 fdt1600n10a.pdf pdf_icon

DT1602

FDT1600N10A www.VBsemi.tw N-Channel 100-V (D-S) MOSFET FEATURES PRODUCT SUMMARY Halogen-free According to IEC 61249-2-21 VDS (V) RDS(on) ( )ID (A) Definition 0.100 at VGS = 10 V 5.0 TrenchFET Power MOSFETs 100 0.120 at VGS = 4.5 V 4.5 175 C Maximum Junction Temperature Compliant to RoHS Directive 2002/95/EC D SOT-223 D G S D G S N-Channel MOSFET

Otros transistores... DT1321, DT1322, DT1510, DT1511, DT1512, DT1520, DT1521, DT1522, 13003, DT1603, DT1610, DT1612, DT1613, DT1621, DT200-700, DT200-800, DT200-900