DTA115ECA Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTA115ECA
Código: 19
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 100 kOhm
Resistencia Base-Emisor R2 = 100 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (fT): 140 MHz
Ganancia de corriente contínua (hFE): 82
Encapsulados: SOT23
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DTA115ECA datasheet
..1. Size:1651K rohm
dta115eca.pdf 
DTA115ECA Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value SOT-23 VCC -50V IC(MAX.) -100mA R1 100k R2 (SST3) 100k lFeatures lInner circuit l l 1) Built-In Biasing Resistors, R1 = R2 = 100k 2) Built-in bias resistors ena
0.1. Size:104K diodes
ddta115eca.pdf
DDTA (R1 = R2 SERIES) CA PNP PRE-BIASED SMALL SIGNAL SOT23 SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary NPN Types Available (DDTC) Case material Molded Plastic. Green Molding Compound. Built-In Biasing Resistors, R1 = R2 Classification Rating 94V-0 Lead Free , RoHS Compliant (Note
0.2. Size:406K diodes
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DDTA (R1 = R2 SERIES) CA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Mechanical Data Epitaxial Planar Die Construction Case SOT23 Complementary NPN Types Available (DDTC) Case Material Molded Plastic, Green Molding Compound Built-In Biasing Resistors, R1 R2 UL Flammability Classification Rating 94V-0 Totally Lead-Free & Fully R
7.1. Size:183K philips
pdta115e series.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 k , R2 = 100 k Product data sheet 2004 Jul 30 Supersedes data of 2004 May 05 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; PDTA115E series R1 = 100 k , R2 = 100 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI
7.2. Size:954K nxp
pdta115emb.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
7.3. Size:417K nxp
pdta115ee pdta115eef pdta115ek pdta115em pdta115es pdta115et pdta115eu.pdf
Important notice Dear Customer, On 7 February 2017 the former NXP Standard Product business became a new company with the tradename Nexperia. Nexperia is an industry leading supplier of Discrete, Logic and PowerMOS semiconductors with its focus on the automotive, industrial, computing, consumer and wearable application markets In data sheets and application notes which still contain
7.4. Size:139K nxp
pdta115eef pdta115ek pdta115es.pdf
DISCRETE SEMICONDUCTORS DATA SHEET PDTA115E series PNP resistor-equipped transistors; R1 = 100 k , R2 = 100 k Product data sheet 2004 Jul 30 Supersedes data of 2004 May 05 NXP Semiconductors Product data sheet PNP resistor-equipped transistors; PDTA115E series R1 = 100 k , R2 = 100 k FEATURES QUICK REFERENCE DATA Built-in bias resistors SYMBOL PARAMETER TYP. MAX. UNI
7.5. Size:156K rohm
dta115eeb.pdf
100mA / 50V Digital transistors (with built-in resistors) DTA115EEB Applications Dimensions (Unit mm) Inverter, Interface, Driver EMT3F Features 1) Built-in bias resistors enable the configuration of (3) an inverter circuit without connecting external input resistors (see equivalent circuit). 2) Each bias resistor is a thin-film resistor. Since they are completely in
7.6. Size:141K rohm
dta115e-ser dta115ee dta115eka.pdf
-100mA / -50V Digital transistors (with built-in resistors) DTA115EM / DTA115EE / DTA115EUA / DTA115EKA Applications Inverter, Interface, Driver Features 1)Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). 2)The bias resistors consist of thin-film resistors with complete isolatio
7.7. Size:67K rohm
dta115esa dta115eua.pdf
DTA115EM / DTA115EE / DTA115EUA Transistors DTA115EKA / DTA115ESA Digital transistors (built-in resistors) DTA115EM / DTA115EE / DTA115EUA / DTA115EKA / DTA115ESA Equivalent circuit Features 1) Built-in bias resistors enable the configuration of an inverter circuit without connecting external input R1 OUT IN resistors (see equivalent circuit). R2 2) The bias resistors c
7.8. Size:1385K rohm
dta115eefra dta115ekafra dta115emfha dta115euafra.pdf
DTA115E series Datasheet PNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors) lOutline l Parameter Value VMT3 EMT3F VCC -50V IC(MAX.) -100mA R1 100k DTA115EM DTA115EEB R2 (SC-105AA) (SC-89) 100k EMT3 UMT3 lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 100k 2) Built-in bias resistors enable the configuratio
7.9. Size:1291K rohm
dta115em dta115eeb dta115ee dta115eub dta115eua dta115eka.pdf
DTA115E series Datasheet PNP -100mA -50V Digital Transistor (Bias Resistor Built-in Transistor) lOutline l Parameter Value SOT-723 SOT-416FL VCC -50V IC(MAX.) -100mA R1 100k DTA115EM DTA115EEB R2 (VMT3) (EMT3F) 100k SOT-416 SOT-323FL lFeatures l 1) Built-In Biasing Resistors, R1 = R2 = 100k 2) Built-in bias resistors enable the con
7.11. Size:227K diodes
ddta115ee.pdf
DDTA (R1 = R2 SERIES) E DDTA (R1 = R2 SERIES) E PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SOT-523 Complementary NPN Types Available (DDTC) Dim Min Max Typ Built-In Biasing Resistors, R1 = R2 A 0.15 0.30 0.22 Lead Free/RoHS Compliant (Note 2) TOP VIEW B C B 0.75 0.85 0.80 "Green" Device (Note 3 and 4)
7.12. Size:175K diodes
ddta115eua.pdf
DDTA (R1 = R2 SERIES) UA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features A Epitaxial Planar Die Construction SOT-323 Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.25 0.40 Lead Free/RoHS Compliant (Note 2) B C B 1.15 1.35 "Green" Device, Note 3 and 4 C 2.00 2.20 Mechanical Data D 0.65 N
7.14. Size:99K onsemi
dta115em3.pdf
MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 Digital Transistors (BRT) R1 = 100 kW, R2 = 100 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains
7.15. Size:99K onsemi
nsvdta115eet1g.pdf
MUN2136, MMUN2136L, MUN5136, DTA115EE, DTA115EM3 Digital Transistors (BRT) R1 = 100 kW, R2 = 100 kW www.onsemi.com PNP Transistors with Monolithic Bias PIN CONNECTIONS Resistor Network PIN 3 COLLECTOR This series of digital transistors is designed to replace a single (OUTPUT) PIN 1 device and its external resistor bias network. The Bias Resistor R1 BASE Transistor (BRT) contains
7.17. Size:222K onsemi
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dta115e.pdf
UNISONIC TECHNOLOGIES CO., LTD DTA115E PNP EPITAXIAL SILICON TRANSISTOR PNP DIGITAL TRANSISTOR (BUILT-IN RESISTORS) FEATURES * Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see the equivalent circuit). * The bias resistors consist of thin-film resistors with complete isolation to allow positive biasing of
7.19. Size:153K cystek
dta115en3.pdf
Spec. No. C257N3 Issued Date 2003.12.26 CYStech Electronics Corp. Revised Date 2004.01.15 Page No. 1/4 PNP Digital Transistors (Built-in Resistors) DTA115EN3 Features Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors (see equivalent circuit). The bias resistors consist of thin-film resistors w
7.22. Size:99K chenmko
chdta115eegp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTA115EEGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 20 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-75/SOT-416) SC-75/SOT-416 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation cu
7.23. Size:91K chenmko
chdta115eugp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTA115EUGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 20 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SC-70/SOT-323) SC-70/SOT-323 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation c
7.24. Size:68K chenmko
chdta115ekgp.pdf
CHENMKO ENTERPRISE CO.,LTD CHDTA115EKGP SURFACE MOUNT PNP Digital Silicon Transistor VOLTAGE 50 Volts CURRENT 20 mAmpere APPLICATION * Switching circuit, Inverter, Interface circuit, Driver circuit. FEATURE * Small surface mounting type. (SOT-23) SOT-23 * High current gain. * Suitable for high packing density. * Low colloector-emitter saturation. * High saturation current capabili
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