DTA144EKA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTA144EKA
Código: 16
Material: Si
Polaridad de transistor: Pre-Biased-PNP
Resistencia de Entrada Base R1 = 47 kOhm
Resistencia Base-Emisor R2 = 47 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Ganancia de corriente contínua (hfe): 68
Paquete / Cubierta: SC59 SOT346
Búsqueda de reemplazo de transistor bipolar DTA144EKA
DTA144EKA Datasheet (PDF)
dta144eka dta144eua.pdf
DTA144E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC-50VIC(MAX.)-100mA R147kDTA144EM DTA144EEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 47k 2) Built-in bias resistors enable the configuration
dta144eka.pdf
SMD Type TransistorsDigital TransistorsDTA144EKA (KDTA144EKA)SOT-23Unit: mm+0.12.9-0.1+0.10.4 -0.1 Features3 Built-in bias resistors enable the configuration of an inverter circuit without connecting external input resistors(see equivalent circuit)1 2+0.1 The bias resistors consist of thin-film resistors 0.95-0.1 0.1+0.05-0.011.9+0.1-0.1 with c
dta144eefra dta144ekafra dta144emfha dta144euafra.pdf
DTA144E seriesDatasheetPNP -100mA -50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC-50VIC(MAX.)-100mA R147kDTA144EM DTA144EEBR2 (SC-105AA) (SC-89)47k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 47k 2) Built-in bias resistors enable the configuration
ddta144eka.pdf
DDTA (R1 = R2 SERIES) KA PNP PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction SC-59 A Complementary NPN Types Available (DDTC) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) B 1.50 1.70 "Green" Device, Note 3 and 4 B CC 2.70 3.00 Mechanical Data D 0.95
pdta144ek 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA144EKPNP resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Sep 05File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA144EKFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3 Simplificatio
pdta144ek 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTA144EKPNP resistor-equipped transistor1998 May 20Product specificationSupersedes data of 1997 Sep 05File under Discrete Semiconductors, SC04Philips Semiconductors Product specificationPNP resistor-equipped transistor PDTA144EKFEATURES Built-in bias resistors R1 and R2(typ. 47 k each)3 Simplificatio
chdta144ektgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTA144EKTGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 100 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabi
chdta144ekgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTA144EKGPSURFACE MOUNT PNP Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 30 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabili
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History: RT1P250C
History: RT1P250C
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