DTC114EKA . Datasheet. Equivalente. Reemplazo. Hoja de especificaciones. Principales características
Número de Parte: DTC114EKA
Código: 24
Material: Si
Polaridad de transistor: Pre-Biased-NPN
Resistencia de Entrada Base R1 = 10 kOhm
Resistencia Base-Emisor R2 = 10 kOhm
Ratio típica de resistencia R1/R2 = 1
ESPECIFICACIONES MÁXIMAS
Disipación total del dispositivo (Pc): 0.2 W
Tensión colector-emisor (Vce): 50 V
Tensión emisor-base (Veb): 10 V
Corriente del colector DC máxima (Ic): 0.1 A
Temperatura operativa máxima (Tj): 150 °C
CARACTERÍSTICAS ELÉCTRICAS
Transición de frecuencia (ft): 140 MHz
Ganancia de corriente contínua (hfe): 30
Paquete / Cubierta: SC59 SOT346
Búsqueda de reemplazo de transistor bipolar DTC114EKA
DTC114EKA Datasheet (PDF)
dtc114eka.pdf
DTC114E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R110kDTC114EM DTC114EEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration of
dtc114eefra dtc114ekafra dtc114emfha dtc114euafra.pdf
DTC114E seriesDatasheetNPN 100mA 50V Digital Transistors (Bias Resistor Built-in Transistors)lOutlinelParameter Value VMT3 EMT3FVCC50VIC(MAX.)100mA R110kDTC114EM DTC114EEBR2 (SC-105AA) (SC-89)10k EMT3 UMT3FlFeaturesl1) Built-In Biasing Resistors, R1 = R2 = 10k 2) Built-in bias resistors enable the configuration of
ddtc114eka.pdf
DDTC (R1 = R2 SERIES) KA NPN PRE-BIASED SMALL SIGNAL SURFACE MOUNT TRANSISTOR Features Epitaxial Planar Die Construction A SC-59 Complementary PNP Types Available (DDTA) Dim Min Max Built-In Biasing Resistors, R1 = R2 A 0.35 0.50 Lead Free/RoHS Compliant (Note 2) "Green" Device, Note 3 and 4 B C B 1.50 1.70 C 2.70 3.00 D 0.95 Mechanical Data GG
pdtc114ek 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114EKNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design3 Reduces number
pdtc114ek 3.pdf
DISCRETE SEMICONDUCTORSDATA SHEETbook, halfpageM3D114PDTC114EKNPN resistor-equipped transistor1998 Nov 26Product specificationSupersedes data of 1998 May 19Philips Semiconductors Product specificationNPN resistor-equipped transistor PDTC114EKFEATURES Built-in bias resistors R1 and R2(typ. 10 k each)3 Simplification of circuit design3 Reduces number
chdtc114ekpt.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC114EKPTSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (SC-59/SOT-346) SC-59/SOT-346* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation cu
chdtc114ekgp.pdf
CHENMKO ENTERPRISE CO.,LTDCHDTC114EKGPSURFACE MOUNT NPN Digital Silicon TransistorVOLTAGE 50 Volts CURRENT 50 mAmpereAPPLICATION* Switching circuit, Inverter, Interface circuit, Driver circuit.FEATURE* Small surface mounting type. (/SOT-23) SOT-23* High current gain. * Suitable for high packing density.* Low colloector-emitter saturation.* High saturation current capabil
Otros transistores... 2N3200 , 2N3201 , 2N3202 , 2N3203 , 2N3204 , 2N3205 , 2N3206 , 2N3207 , B772 , 2N3209 , 2N3209AQF , 2N3209CSM , 2N3209DCSM , 2N3209L , 2N321 , 2N3210 , 2N3211 .
